Hybrid CMOS device and manufacturing method thereof

The invention relates to the technical field of semiconductor device manufacturing, in particular to a hybrid CMOS device and a manufacturing method thereof, and the manufacturing method comprises the following steps: (1) selecting a silicon wafer as a substrate, and carrying out chemical cleaning; (2) covering a layer of photoresist on the surface of the substrate by using a mask technology, injecting a dopant into the p-type region and the n-type region, and rapidly annealing to combine the doped material with the silicon wafer; (3) growing an insulating oxide layer on the whole silicon substrate; (4) forming a polycrystalline silicon gate electrode on the insulating oxide layer by utilizing a photoetching technology; (5) depositing a metal layer on the whole device; and (6) etching the redundant metal layer and insulating layer. According to the manufacturing method of the hybrid CMOS device provided by the invention, the size and power consumption of the device can be further reduced, a smaller chip area