Ultrathin oxidized silicon wafer and processing technology thereof

The invention relates to the technical field of semiconductor silicon wafer production and manufacturing, in particular to an ultrathin oxidized silicon wafer and a processing technology thereof. The ultrathin oxidized silicon wafer is prepared by polishing and oxidizing a silicon wafer, and comprises an ultrathin silicon wafer substrate and a surface oxidation film covering the surface of the ultrathin silicon wafer substrate. The processing technology comprises the steps of substrate thinning, polishing, oxidizing and cleaning. The ultrathin oxidized silicon wafer not only has a smaller total thickness, but also has a larger wet oxidation film thickness, the smaller thickness can reduce the packaging volume in use, increase the flexibility and provide larger deformation, and the larger wet oxidation film thickness also increases the sealing characteristic and the specific performance in the optical aspect of the ultrathin oxidized silicon wafer. 本发明涉及半导体硅片生产制造技术领域，具体地说，涉及一种超薄氧化硅片及其加工工艺。该超薄氧化硅片由硅片经抛光、氧化加工制成，