MEMORY ARRAY AND METHOD FOR USE IN FORMING A MEMORY ARRAY

The invention relates to a memory array and a method used in forming the memory array. A method used in forming a memory array includes forming a stack including vertically alternating insulating stacks and word line stacks. The stack includes an insulator stack over the word line stack. The insulator stack includes a first insulator material including silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus. The first insulator material is patterned to form a first horizontally elongated trench in the insulator stack. A second insulator material is formed in the first trench along sidewalls of the first insulator material. The second insulator material has a composition different from that of the first insulator material and narrows the first trench. After forming the second insulator material, a second horizontally elongated trench is formed through the insulating stack and the word line stack. 本申请案涉及存储器阵列及在形成存储器阵列时所使用的方法。一种在形成存储器阵列时所使用的方法包括：形成包括垂直交替的绝缘叠层与字线叠层的堆叠。所述堆叠在所述字线叠层上方包括绝缘体叠层。所述绝缘