Reconfigurable functional electronic device and preparation method thereof
The invention discloses a reconfigurable functional electronic device which specifically comprises a source electrode, a drain electrode, a two-dimensional semiconductor channel layer, a two-dimensional semiconductor tunneling layer, a floating gate layer, a two-dimensional semiconductor dielectric...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention discloses a reconfigurable functional electronic device which specifically comprises a source electrode, a drain electrode, a two-dimensional semiconductor channel layer, a two-dimensional semiconductor tunneling layer, a floating gate layer, a two-dimensional semiconductor dielectric layer and a gate electrode which are sequentially stacked, and the floating gate layer comprises metal nanoparticles. According to the invention, the floating gate layer comprises the metal nanoparticles, the capturing effect of the metal nanoparticles on charges avoids the introduction of an extra electric field, and the power consumption is reduced. Meanwhile, the independence of the metal nanoparticles is beneficial to independent regulation and control of the two ends of a single device, the preparation is simple, and additional photoetching and etching processes are not needed.
本发明公开的一种可重构功能电子器件,所述可重构功能电子器件具体包括依次层叠设置的源漏电极、二维半导体沟道层、二维半导体隧穿层、浮栅层、二维半导体介电层和栅电极,所述浮栅层包括金属纳米颗粒。本发明的浮栅层包括金属纳米颗粒,金属纳米颗粒对电荷的捕获作用避免了额外电场的引入 |
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