Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device includes forming a base region in a substrate. A protective layer is formed on the substrate and covers the base region. Forming a first sacrificial layer and a second sacrificial layer on the substrate, and covering the protective layer; a source region, a well region and a junction field effect transistor region are formed in a substrate. Wherein a source region, a well region, and a junction field effect transistor region are formed in sequence, the source region and the well region are formed using a patterned first sacrificial layer, and the junction field effect transistor region is formed using a second sacrificial layer, or the junction field effect transistor region, the well region, and the source region are formed in sequence, the junction field effect transistor region is formed using the patterned first sacrificial layer, and the well region and the source region are formed using a second sacrificial layer. The manufacturing method disclosed by the