TSV (Through Silicon Via) after-etching cleaning process

The present invention provides a TSV post-etch cleaning process comprising the steps of: providing uniform acoustic energy on each point of an entire wafer by varying the phase of a mega-frequency ultrasonic wave in a gap between a mega-frequency ultrasonic device and the wafer; a 5 * 50 [mu] m etched TSV wafer is used, and experimental verification is carried out through physical analysis and electrical testing; an SEM equipped with an EDX is used to detect the presence of fluoropolymer residues of a TSV test piece before and after cleaning, an FIB-SEM is used to assess copper plating performance, and a TSV leakage current map and voltage ramp dielectric breakdown are used as main electrical reliability indicators to assess the cleaning effect. Compared with the traditional single crystal wafer spray cleaning process, the TSV post-etching cleaning process has the advantage that the electrical property of the wafer cleaned by the SAPS is obviously improved. 本发明提供有一种TSV蚀刻后清洗工艺，该TSV蚀刻后清洗工艺包括以下步骤：通过在兆频超声波装置和晶片之间