Hafnium compound, hafnium precursor composition containing said hafnium compound, hafnium-containing thin film containing said hafnium compound or said hafnium precursor composition, and method for producing same

The present invention relates to a hafnium-containing precursor which can be used to form a variety of hafnium-containing thin films, which is liquid at room temperature and exhibits high volatility and high thermal stability, and thus can be used in a high-quality hafnium-containing thin film and a...

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Hauptverfasser:	LEE DOO-HUN, SHIN HYUNG-SOO, KIM HYUNANG, KWON CHEOL-HEE
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMISTRY METALLURGY ORGANIC CHEMISTRY
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creator	LEE DOO-HUN SHIN HYUNG-SOO KIM HYUNANG KWON CHEOL-HEE
description	The present invention relates to a hafnium-containing precursor which can be used to form a variety of hafnium-containing thin films, which is liquid at room temperature and exhibits high volatility and high thermal stability, and thus can be used in a high-quality hafnium-containing thin film and a method for manufacturing the same. 本发明涉及一种可以用于形成多种含铪薄膜的含铪前驱体，所述含铪前驱体在常温下为液体且呈现出较高的挥发性以及较高的热学稳定性，因此可以在高品质的含铪薄膜及其制造方法中使用。
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SHIN HYUNG-SOO ; KIM HYUNANG ; KWON CHEOL-HEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117396487A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2024</creationdate><topic>ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM</topic><topic>CHEMISTRY</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE DOO-HUN</creatorcontrib><creatorcontrib>SHIN HYUNG-SOO</creatorcontrib><creatorcontrib>KIM HYUNANG</creatorcontrib><creatorcontrib>KWON CHEOL-HEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE DOO-HUN</au><au>SHIN HYUNG-SOO</au><au>KIM HYUNANG</au><au>KWON CHEOL-HEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Hafnium compound, hafnium precursor composition containing said hafnium compound, hafnium-containing thin film containing said hafnium compound or said hafnium precursor composition, and method for producing same</title><date>2024-01-12</date><risdate>2024</risdate><abstract>The present invention relates to a hafnium-containing precursor which can be used to form a variety of hafnium-containing thin films, which is liquid at room temperature and exhibits high volatility and high thermal stability, and thus can be used in a high-quality hafnium-containing thin film and a method for manufacturing the same. 本发明涉及一种可以用于形成多种含铪薄膜的含铪前驱体，所述含铪前驱体在常温下为液体且呈现出较高的挥发性以及较高的热学稳定性，因此可以在高品质的含铪薄膜及其制造方法中使用。</abstract><oa>free_for_read</oa></addata></record>
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subjects	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM CHEMISTRY METALLURGY ORGANIC CHEMISTRY
title	Hafnium compound, hafnium precursor composition containing said hafnium compound, hafnium-containing thin film containing said hafnium compound or said hafnium precursor composition, and method for producing same
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