一种高导电低表面轮廓铜箔及其制备方法和应用

本发明涉及电子材料技术领域，具体涉及一种高导电低表面轮廓铜箔及其制备方法和应用。所述高导电低表面轮廓铜箔的制备方法，将厚度为12-35μm、表面粗糙度≤1.6μm的压延铜箔置于退火设备中，通入保护气体，升温至900-1050℃退火3-10h，然后降温冷却，得到高导电低表面轮廓铜箔。本发明采用的大尺寸铜箔的高温退火工艺，在不施加任何化学或电化学表面处理的情况下实现了铜箔电导率和表面质量的同步提升，具有工艺简单、避免增加污染物质的优点，采用本发明公开的方法制备得到的高导电低表面轮廓铜箔的电导率为101~105％IACS、表面粗糙度Rz≤1.2μm。 The invention relates to the technical field of electronic materials, in particular to a high-conductivity low-surface-profile copper foil and a preparation method and application thereof. The preparation method of the high-conductivity low-surface-profile copper foil comprises the steps that rolled copper foil with the thickness being 12-35 microns and the surface roughness being smaller than or equal to 1.6 microns is placed in annealing equipment, protective gas is introduced, the temperature is increased to 900-1050 DEG C, annealing is conducted for 3-10 h, then cooling is conducted, and the high-conductivity low-surface-profile copper foil is obtained. According to the high-temperature annealing process for the large-size copper foil