Microwave plasma chemical vapor deposition device of millimeter wave frequency band
The invention relates to a microwave plasma chemical vapor deposition device of a millimeter wave frequency band, which belongs to the technical field of chemical vapor deposition, and comprises a microwave source, a beam splitter, a phase shift module and a vacuum cavity, the beam splitter is used...
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| creator | HUANG QILI HU PENG MA GUOWU XIE JIAO ZHUO TINGTING SUN DIMIN GONG SHENGGANG HU LINLIN XIANG YONGFEI JIANG YI |
| description | The invention relates to a microwave plasma chemical vapor deposition device of a millimeter wave frequency band, which belongs to the technical field of chemical vapor deposition, and comprises a microwave source, a beam splitter, a phase shift module and a vacuum cavity, the beam splitter is used for converting a beam of a millimeter wave frequency band into a plurality of sub-beams with the same amplitude and phase distribution, the phase shift module is filled with ferrite and is used for adjusting the phases of the sub-beams, a sample table for placing a sample is arranged in the vacuum cavity, and the sub-beams after phase adjustment are synthesized on the sample. According to the invention, rapid adjustment of the beam phase is realized through the phase shift module, rapid change of the antinode and trough positions of the synthetic standing wave field is realized, and the uniformity problem of the standing wave field in the prior art is solved.
本发明涉及一种毫米波频段的微波等离子体化学气相沉积装置，属于化学气相沉积技术领域，包括微波源、分束器、移相模块以 |
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本发明涉及一种毫米波频段的微波等离子体化学气相沉积装置，属于化学气相沉积技术领域，包括微波源、分束器、移相模块以</description><language>chi ; eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231222&DB=EPODOC&CC=CN&NR=117265514A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231222&DB=EPODOC&CC=CN&NR=117265514A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HUANG QILI</creatorcontrib><creatorcontrib>HU PENG</creatorcontrib><creatorcontrib>MA GUOWU</creatorcontrib><creatorcontrib>XIE JIAO</creatorcontrib><creatorcontrib>ZHUO TINGTING</creatorcontrib><creatorcontrib>SUN DIMIN</creatorcontrib><creatorcontrib>GONG SHENGGANG</creatorcontrib><creatorcontrib>HU LINLIN</creatorcontrib><creatorcontrib>XIANG YONGFEI</creatorcontrib><creatorcontrib>JIANG YI</creatorcontrib><title>Microwave plasma chemical vapor deposition device of millimeter wave frequency band</title><description>The invention relates to a microwave plasma chemical vapor deposition device of a millimeter wave frequency band, which belongs to the technical field of chemical vapor deposition, and comprises a microwave source, a beam splitter, a phase shift module and a vacuum cavity, the beam splitter is used for converting a beam of a millimeter wave frequency band into a plurality of sub-beams with the same amplitude and phase distribution, the phase shift module is filled with ferrite and is used for adjusting the phases of the sub-beams, a sample table for placing a sample is arranged in the vacuum cavity, and the sub-beams after phase adjustment are synthesized on the sample. According to the invention, rapid adjustment of the beam phase is realized through the phase shift module, rapid change of the antinode and trough positions of the synthetic standing wave field is realized, and the uniformity problem of the standing wave field in the prior art is solved.
本发明涉及一种毫米波频段的微波等离子体化学气相沉积装置，属于化学气相沉积技术领域，包括微波源、分束器、移相模块以</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjE0OAUEQRntjIbhDOYBFY1jLhNiwYT8pNdVRSf_pbi1ubyIOYPW9xXvfWF1OQim8sDJEi9kh0J2dEFqoGEOCnmPIUiT4AasQQzDgxFpxXDjBNzWJH0_29IYb-n6qRgZt5tlvJ2p-2F_b42K46jhHJPZcuvas9Xa5aRq93q3-cT6QbjjU</recordid><startdate>20231222</startdate><enddate>20231222</enddate><creator>HUANG QILI</creator><creator>HU PENG</creator><creator>MA GUOWU</creator><creator>XIE JIAO</creator><creator>ZHUO TINGTING</creator><creator>SUN DIMIN</creator><creator>GONG SHENGGANG</creator><creator>HU LINLIN</creator><creator>XIANG YONGFEI</creator><creator>JIANG YI</creator><scope>EVB</scope></search><sort><creationdate>20231222</creationdate><title>Microwave plasma chemical vapor deposition device of millimeter wave frequency band</title><author>HUANG QILI ; HU PENG ; MA GUOWU ; XIE JIAO ; ZHUO TINGTING ; SUN DIMIN ; GONG SHENGGANG ; HU LINLIN ; XIANG YONGFEI ; JIANG YI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117265514A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>HUANG QILI</creatorcontrib><creatorcontrib>HU PENG</creatorcontrib><creatorcontrib>MA GUOWU</creatorcontrib><creatorcontrib>XIE JIAO</creatorcontrib><creatorcontrib>ZHUO TINGTING</creatorcontrib><creatorcontrib>SUN DIMIN</creatorcontrib><creatorcontrib>GONG SHENGGANG</creatorcontrib><creatorcontrib>HU LINLIN</creatorcontrib><creatorcontrib>XIANG YONGFEI</creatorcontrib><creatorcontrib>JIANG YI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HUANG QILI</au><au>HU PENG</au><au>MA GUOWU</au><au>XIE JIAO</au><au>ZHUO TINGTING</au><au>SUN DIMIN</au><au>GONG SHENGGANG</au><au>HU LINLIN</au><au>XIANG YONGFEI</au><au>JIANG YI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Microwave plasma chemical vapor deposition device of millimeter wave frequency band</title><date>2023-12-22</date><risdate>2023</risdate><abstract>The invention relates to a microwave plasma chemical vapor deposition device of a millimeter wave frequency band, which belongs to the technical field of chemical vapor deposition, and comprises a microwave source, a beam splitter, a phase shift module and a vacuum cavity, the beam splitter is used for converting a beam of a millimeter wave frequency band into a plurality of sub-beams with the same amplitude and phase distribution, the phase shift module is filled with ferrite and is used for adjusting the phases of the sub-beams, a sample table for placing a sample is arranged in the vacuum cavity, and the sub-beams after phase adjustment are synthesized on the sample. According to the invention, rapid adjustment of the beam phase is realized through the phase shift module, rapid change of the antinode and trough positions of the synthetic standing wave field is realized, and the uniformity problem of the standing wave field in the prior art is solved.
本发明涉及一种毫米波频段的微波等离子体化学气相沉积装置，属于化学气相沉积技术领域，包括微波源、分束器、移相模块以</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | Microwave plasma chemical vapor deposition device of millimeter wave frequency band |
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