High-power chaotic semiconductor laser based on Y waveguide coupling

The invention relates to the field of chaotic semiconductor lasers, and discloses a high-power chaotic semiconductor laser based on Y waveguide coupling, which comprises a first DFB laser, a second DFB laser, a Y waveguide, a DBR grating and a tapered waveguide optical amplifier, wherein the laser o...

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Bibliographische Detailangaben
Hauptverfasser: QIAO LIJUN, LI WENTAO, WANG XIAONA, ZHAI YUJIA, WEI XIAOJING, ZHANG MINGJIANG, ZHANG CHENYANG
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention relates to the field of chaotic semiconductor lasers, and discloses a high-power chaotic semiconductor laser based on Y waveguide coupling, which comprises a first DFB laser, a second DFB laser, a Y waveguide, a DBR grating and a tapered waveguide optical amplifier, wherein the laser output end of the first DFB laser and the laser output end of the second DFB laser are connected with one end of a first branch and one end of a second branch of the Y waveguide respectively, so that lasing light waves of the first DFB laser and the second DFB laser are subjected to interference coupling at a coupling point C of the Y waveguide; a bus straight waveguide of the Y waveguide is connected with the laser input end of the DBR grating, the small end of the conical waveguide optical amplifier is aligned with the transmission light output end of the DBR grating, and the large end of the conical waveguide optical amplifier is used for outputting broadband time-delay-free high-power chaotic laser. According to