LDMOS device and manufacturing method thereof

According to the LDMOS device and the manufacturing method thereof provided by the invention, the first epitaxial layer is formed in the drift region through an epitaxial growth process, so that the functional region with the conduction type opposite to that of the drift region is introduced into th...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHU QIANGTAO, WANG PENGPENG, WANG TAO, KONG FANYOU, ZHANG HONGGUANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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