Preparation method of high-stability doped graphene film

The invention discloses a preparation method of a high-stability doped graphene film. The obtained doped graphene film has excellent stability. In a traditional doping method, after CVD graphene is transferred to a target substrate, HAuCl4, HNO3, HCl, H2SO4 and other dopants are adsorbed on the upper surface of the graphene to achieve doping. Due to agglomeration of Au nanoparticles and volatilization of dopants such as HAuCl4, HNO3, HCl and H2SO4, the conductivity of a graphene-doped transparent conductive film is very unstable, and the practical application of the doped graphene is greatly limited. The new transfer method provided by the invention can successfully inhibit aggregation of Au nanoparticles and hinder desorption (volatilization) of dopants such as HAuCl4, HNO3, HCl, H2SO4 and the like at the same time, and finally the graphene-doped transparent conductive film with stable conductivity is obtained. The preparation method of the high-stability doped graphene thin film provided by the invention is