Silver ion sensor and preparation method and application thereof
The invention discloses a silver ion sensor and a preparation method and application thereof. The silver ion sensor comprises a gate electrode, a silicon dioxide layer, a source electrode, a drain electrode and a transition metal sulfide layer, a silicon dioxide layer is arranged on the silicon gate...
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creator | NIU LI GUO ZHINAN HWU HAI-GWO LUO YIYU KOU CUIYUN |
description | The invention discloses a silver ion sensor and a preparation method and application thereof. The silver ion sensor comprises a gate electrode, a silicon dioxide layer, a source electrode, a drain electrode and a transition metal sulfide layer, a silicon dioxide layer is arranged on the silicon gate electrode, and a source electrode, a drain electrode and a transition metal sulfide layer are arranged on the silicon dioxide layer; the transition metal sulfide layer is located between the source electrode and the drain electrode, and the two ends of the transition metal sulfide layer are connected with the source electrode and the drain electrode respectively. The silver ion sensor can detect silver ions in the concentration range of 10 -10 mol/L in water, is low in background noise, high in sensitivity and good in stability during detection, and can detect trace and trace silver ions.
本发明公开了一种银离子传感器及其制备方法和应用,所述银离子传感器包括栅电极、二氧化硅层、源电极、漏电极和过渡金属硫化物层;所述硅栅电极上设有二氧化硅层,二氧化硅层上设有源电极、漏电极和过渡金属硫化物层;过渡金属硫化物层位于源电极和漏 |
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本发明公开了一种银离子传感器及其制备方法和应用,所述银离子传感器包括栅电极、二氧化硅层、源电极、漏电极和过渡金属硫化物层;所述硅栅电极上设有二氧化硅层,二氧化硅层上设有源电极、漏电极和过渡金属硫化物层;过渡金属硫化物层位于源电极和漏</description><language>chi ; eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231208&DB=EPODOC&CC=CN&NR=117191912A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231208&DB=EPODOC&CC=CN&NR=117191912A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NIU LI</creatorcontrib><creatorcontrib>GUO ZHINAN</creatorcontrib><creatorcontrib>HWU HAI-GWO</creatorcontrib><creatorcontrib>LUO YIYU</creatorcontrib><creatorcontrib>KOU CUIYUN</creatorcontrib><title>Silver ion sensor and preparation method and application thereof</title><description>The invention discloses a silver ion sensor and a preparation method and application thereof. The silver ion sensor comprises a gate electrode, a silicon dioxide layer, a source electrode, a drain electrode and a transition metal sulfide layer, a silicon dioxide layer is arranged on the silicon gate electrode, and a source electrode, a drain electrode and a transition metal sulfide layer are arranged on the silicon dioxide layer; the transition metal sulfide layer is located between the source electrode and the drain electrode, and the two ends of the transition metal sulfide layer are connected with the source electrode and the drain electrode respectively. The silver ion sensor can detect silver ions in the concentration range of 10 <-9 >-10 <-6 > mol/L in water, is low in background noise, high in sensitivity and good in stability during detection, and can detect trace and trace silver ions.
本发明公开了一种银离子传感器及其制备方法和应用,所述银离子传感器包括栅电极、二氧化硅层、源电极、漏电极和过渡金属硫化物层;所述硅栅电极上设有二氧化硅层,二氧化硅层上设有源电极、漏电极和过渡金属硫化物层;过渡金属硫化物层位于源电极和漏</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAIzswpSy1SyMzPUyhOzSvOL1JIzEtRKChKLUgsSiwBCeemlmTkp4CFEwsKcjKTIcIlGalFqflpPAysaYk5xam8UJqbQdHNNcTZQze1ID8-tbggMTk1L7Uk3tnP0NDc0BIIjRyNiVEDAOOgMYk</recordid><startdate>20231208</startdate><enddate>20231208</enddate><creator>NIU LI</creator><creator>GUO ZHINAN</creator><creator>HWU HAI-GWO</creator><creator>LUO YIYU</creator><creator>KOU CUIYUN</creator><scope>EVB</scope></search><sort><creationdate>20231208</creationdate><title>Silver ion sensor and preparation method and application thereof</title><author>NIU LI ; GUO ZHINAN ; HWU HAI-GWO ; LUO YIYU ; KOU CUIYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN117191912A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>NIU LI</creatorcontrib><creatorcontrib>GUO ZHINAN</creatorcontrib><creatorcontrib>HWU HAI-GWO</creatorcontrib><creatorcontrib>LUO YIYU</creatorcontrib><creatorcontrib>KOU CUIYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NIU LI</au><au>GUO ZHINAN</au><au>HWU HAI-GWO</au><au>LUO YIYU</au><au>KOU CUIYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Silver ion sensor and preparation method and application thereof</title><date>2023-12-08</date><risdate>2023</risdate><abstract>The invention discloses a silver ion sensor and a preparation method and application thereof. The silver ion sensor comprises a gate electrode, a silicon dioxide layer, a source electrode, a drain electrode and a transition metal sulfide layer, a silicon dioxide layer is arranged on the silicon gate electrode, and a source electrode, a drain electrode and a transition metal sulfide layer are arranged on the silicon dioxide layer; the transition metal sulfide layer is located between the source electrode and the drain electrode, and the two ends of the transition metal sulfide layer are connected with the source electrode and the drain electrode respectively. The silver ion sensor can detect silver ions in the concentration range of 10 <-9 >-10 <-6 > mol/L in water, is low in background noise, high in sensitivity and good in stability during detection, and can detect trace and trace silver ions.
本发明公开了一种银离子传感器及其制备方法和应用,所述银离子传感器包括栅电极、二氧化硅层、源电极、漏电极和过渡金属硫化物层;所述硅栅电极上设有二氧化硅层,二氧化硅层上设有源电极、漏电极和过渡金属硫化物层;过渡金属硫化物层位于源电极和漏</abstract><oa>free_for_read</oa></addata></record> |
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subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING |
title | Silver ion sensor and preparation method and application thereof |
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