Method for removing and detecting carbon protective film on surface of silicon carbide device

A method for removing and detecting a carbon protective film on the surface of a silicon carbide device comprises the following steps: providing a SiC wafer which is subjected to ion implantation, and forming a layer of carbon protective film on the surface of the SiC wafer; carrying out annealing treatment on the SiC wafer at the temperature of between 1,600 and 1,800 DEG C; a carbon film softening agent is adopted to soak the SiC wafer, and the carbon film softening agent is an aqueous solution containing acid and a surfactant; and removing the carbon protective film by using oxygen plasma. A carbon film softening agent with a specific formula is adopted to treat and soften a carbon protective film, so that the adhesive force of the carbon protective film on the surface of a silicon carbide device is reduced, and then oxygen plasma is adopted to react with the carbon protective film through a dry photoresist removing method, so that the carbon protective film is removed. The thickness of the removed carbon