Structural analysis method for optimizing heat dissipation performance of TSV adapter plate through transient thermal resistance curve

The embodiment of the invention provides a structural analysis method for optimizing the heat dissipation performance of a TSV adapter plate through a transient thermal resistance curve. The method comprises the steps that TSV adapter plates with different TSV structure unit center point distances a...

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Hauptverfasser:	WANG KUNSHU, LIU YIN'AO, WANG BO, KONG ZEBIN, DU LIN, CHEN FAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
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creator	WANG KUNSHU LIU YIN'AO WANG BO KONG ZEBIN DU LIN CHEN FAN
description	The embodiment of the invention provides a structural analysis method for optimizing the heat dissipation performance of a TSV adapter plate through a transient thermal resistance curve. The method comprises the steps that TSV adapter plates with different TSV structure unit center point distances are prepared; testing a breakdown voltage curve of the TSV adapter plate; packaging a diode chip on the TSV adapter plate to obtain diode devices with different distances between central points of TSV structure units; a differential structure function curve of the diode device is tested through a transient thermal resistance method, and the relation between the distance between the center points of the TSV structure units and thermal resistance parameters is obtained; and according to the breakdown voltage curve and the thermal resistance curve of the TSV adapter plate, determining the optimal distance range of the central points of the TSV structure units. The heat dissipation performance of the TSV adapter plate i
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The method comprises the steps that TSV adapter plates with different TSV structure unit center point distances are prepared; testing a breakdown voltage curve of the TSV adapter plate; packaging a diode chip on the TSV adapter plate to obtain diode devices with different distances between central points of TSV structure units; a differential structure function curve of the diode device is tested through a transient thermal resistance method, and the relation between the distance between the center points of the TSV structure units and thermal resistance parameters is obtained; and according to the breakdown voltage curve and the thermal resistance curve of the TSV adapter plate, determining the optimal distance range of the central points of the TSV structure units. 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subjects	MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS TESTING
title	Structural analysis method for optimizing heat dissipation performance of TSV adapter plate through transient thermal resistance curve
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