Method for etching source contact hole of groove type SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)

The invention discloses a method for etching a source contact hole of a groove type SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), which belongs to the technical field of semiconductor manufacturing, and is characterized in that the prior art is improved, a cleaning liquid after two...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HONG JIWEN, LEE YONG-SUK, LEE MIN-JU, KIM BYEONG-SEOB, MA LIQI
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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