Perovskite scintillator material and preparation method of indirect X-ray detector thereof
The invention provides a preparation method of a perovskite scintillator material, and the method comprises the steps: S11, carrying out the spin coating of a bottom perovskite nanocrystalline layer, and depositing a bottom polymer thin film layer; s12, sequentially spin-coating a perovskite nanocry...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention provides a preparation method of a perovskite scintillator material, and the method comprises the steps: S11, carrying out the spin coating of a bottom perovskite nanocrystalline layer, and depositing a bottom polymer thin film layer; s12, sequentially spin-coating a perovskite nanocrystalline layer and a polymer thin film layer on the upper surface of the bottom polymer thin film layer, wherein the perovskite nanocrystalline layer and the polymer thin film layer form a composite structure layer; wherein the number of the composite structure layers is at least two; the uppermost layer of the composite structure layer comprises a top perovskite nanocrystalline layer; wherein the band gaps of the perovskite nanocrystalline layers are reduced layer by layer from the bottom perovskite nanocrystalline layer to the top perovskite nanocrystalline layer from bottom to top. On the other hand, the invention provides a method for preparing an indirect X-ray detector by using the perovskite scintillator mat |
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