Quantum dot photoresist and preparation method of quantum dot color conversion layer
The invention relates to a quantum dot photoresist and a preparation method of a quantum dot color conversion layer. The quantum dot photoresist comprises a photoresist mother solution, quantum dots and a liquid scattering particle precursor, wherein the quantum dots and the liquid scattering partic...
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Format: | Patent |
Sprache: | chi ; eng |
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Zusammenfassung: | The invention relates to a quantum dot photoresist and a preparation method of a quantum dot color conversion layer. The quantum dot photoresist comprises a photoresist mother solution, quantum dots and a liquid scattering particle precursor, wherein the quantum dots and the liquid scattering particle precursor are dispersed and dissolved in the photoresist mother solution, and the liquid scattering particle precursor can be hydrolyzed and condensed in the photoetching curing process of the quantum dot photoresist to form a plurality of uniformly distributed scattering particles. Liquid scattering particle precursors fused and dispersed in a system in advance are subjected to hydrolytic polycondensation in the photoetching curing process of quantum dot photoresist to form required scattering particles, so that the number of times of scattering refraction of blue light in a color conversion layer is increased, the optical path of the blue light is increased, and quantum dot materials are excited multiple times |
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