Quantum dot, method of manufacturing quantum dot, optical member, and electronic device
A quantum dot, a method of manufacturing the quantum dot, an optical member, and an electronic device are provided. The quantum dot may include a core and a shell covering at least a portion of the core, where the core may include indium (In), gallium (Ga), and phosphorus (P), and the shell may incl...
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| creator | PARK KAWON PARK SEUNG-WON LEE TAEK JOON JANG SEUNG-HEE JUNG JUN HYUK LEE DONG-HEE |
| description | A quantum dot, a method of manufacturing the quantum dot, an optical member, and an electronic device are provided. The quantum dot may include a core and a shell covering at least a portion of the core, where the core may include indium (In), gallium (Ga), and phosphorus (P), and the shell may include a Group II-VI semiconductor compound, a Group III-V semiconductor compound, a Group III-VI semiconductor compound, or a combination thereof, in the core and the shell, a portion of the core may include indium (In), gallium (Ga), and phosphorus (P). The ratio of the number of moles of Ga to the sum of the number of moles of In and the number of moles of Ga (MGa/(MIn + MGa)) may be in the range of about 0.02 to about 0.18, and the ratio of the sum of the number of moles of In and the number of moles of Ga to the number of moles of P ((MIn + MGa)/MP) may be in the range of about 1 to about 1.2 in the core and the shell.
提供了量子点、制造量子点的方法、光学构件和电子设备。量子点可以包括核和覆盖核的至少一部分的壳，其中核可以包括铟(In)、镓(Ga)和磷(P)，壳可以包括第II-VI族半导体化合物、第III- |
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提供了量子点、制造量子点的方法、光学构件和电子设备。量子点可以包括核和覆盖核的至少一部分的壳，其中核可以包括铟(In)、镓(Ga)和磷(P)，壳可以包括第II-VI族半导体化合物、第III-</description><language>chi ; eng</language><subject>ADHESIVES ; BLASTING ; CHEMISTRY ; DYES ; FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF ; HEATING ; LIGHTING ; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES ; MECHANICAL ENGINEERING ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NANOTECHNOLOGY ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; POLISHES ; SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES ; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR ; TRANSPORTING ; WEAPONS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231020&DB=EPODOC&CC=CN&NR=116904182A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20231020&DB=EPODOC&CC=CN&NR=116904182A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK KAWON</creatorcontrib><creatorcontrib>PARK SEUNG-WON</creatorcontrib><creatorcontrib>LEE TAEK JOON</creatorcontrib><creatorcontrib>JANG SEUNG-HEE</creatorcontrib><creatorcontrib>JUNG JUN HYUK</creatorcontrib><creatorcontrib>LEE DONG-HEE</creatorcontrib><title>Quantum dot, method of manufacturing quantum dot, optical member, and electronic device</title><description>A quantum dot, a method of manufacturing the quantum dot, an optical member, and an electronic device are provided. The quantum dot may include a core and a shell covering at least a portion of the core, where the core may include indium (In), gallium (Ga), and phosphorus (P), and the shell may include a Group II-VI semiconductor compound, a Group III-V semiconductor compound, a Group III-VI semiconductor compound, or a combination thereof, in the core and the shell, a portion of the core may include indium (In), gallium (Ga), and phosphorus (P). The ratio of the number of moles of Ga to the sum of the number of moles of In and the number of moles of Ga (MGa/(MIn + MGa)) may be in the range of about 0.02 to about 0.18, and the ratio of the sum of the number of moles of In and the number of moles of Ga to the number of moles of P ((MIn + MGa)/MP) may be in the range of about 1 to about 1.2 in the core and the shell.
提供了量子点、制造量子点的方法、光学构件和电子设备。量子点可以包括核和覆盖核的至少一部分的壳，其中核可以包括铟(In)、镓(Ga)和磷(P)，壳可以包括第II-VI族半导体化合物、第III-</description><subject>ADHESIVES</subject><subject>BLASTING</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF</subject><subject>HEATING</subject><subject>LIGHTING</subject><subject>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</subject><subject>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</subject><subject>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</subject><subject>MECHANICAL ENGINEERING</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NANOTECHNOLOGY</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHES</subject><subject>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</subject><subject>STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR</subject><subject>TRANSPORTING</subject><subject>WEAPONS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyjEPQTEQAOAuBsF_OPuTKCKM8kJMEonE-HLaK03aXvVd_X4Gg9H0Ld9QXc8Vk9QIlqWBSPJgC-wgYqoOjdTi0x2ev4mzeIPhk-ONSgOYLFAgI4WTN2Dp5Q2N1cBh6GnydaSmh_2lPc4oc0d9RkOJpGtPWq-385XeLHbLf84bOYc5nw</recordid><startdate>20231020</startdate><enddate>20231020</enddate><creator>PARK KAWON</creator><creator>PARK SEUNG-WON</creator><creator>LEE TAEK JOON</creator><creator>JANG SEUNG-HEE</creator><creator>JUNG JUN HYUK</creator><creator>LEE DONG-HEE</creator><scope>EVB</scope></search><sort><creationdate>20231020</creationdate><title>Quantum dot, method of manufacturing quantum dot, optical member, and electronic device</title><author>PARK KAWON ; PARK SEUNG-WON ; LEE TAEK JOON ; JANG SEUNG-HEE ; JUNG JUN HYUK ; LEE DONG-HEE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116904182A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>BLASTING</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF</topic><topic>HEATING</topic><topic>LIGHTING</topic><topic>MANUFACTURE OR TREATMENT OF NANOSTRUCTURES</topic><topic>MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE</topic><topic>MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES</topic><topic>MECHANICAL ENGINEERING</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NANOTECHNOLOGY</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHES</topic><topic>SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES</topic><topic>STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR</topic><topic>TRANSPORTING</topic><topic>WEAPONS</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK KAWON</creatorcontrib><creatorcontrib>PARK SEUNG-WON</creatorcontrib><creatorcontrib>LEE TAEK JOON</creatorcontrib><creatorcontrib>JANG SEUNG-HEE</creatorcontrib><creatorcontrib>JUNG JUN HYUK</creatorcontrib><creatorcontrib>LEE DONG-HEE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK KAWON</au><au>PARK SEUNG-WON</au><au>LEE TAEK JOON</au><au>JANG SEUNG-HEE</au><au>JUNG JUN HYUK</au><au>LEE DONG-HEE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Quantum dot, method of manufacturing quantum dot, optical member, and electronic device</title><date>2023-10-20</date><risdate>2023</risdate><abstract>A quantum dot, a method of manufacturing the quantum dot, an optical member, and an electronic device are provided. The quantum dot may include a core and a shell covering at least a portion of the core, where the core may include indium (In), gallium (Ga), and phosphorus (P), and the shell may include a Group II-VI semiconductor compound, a Group III-V semiconductor compound, a Group III-VI semiconductor compound, or a combination thereof, in the core and the shell, a portion of the core may include indium (In), gallium (Ga), and phosphorus (P). The ratio of the number of moles of Ga to the sum of the number of moles of In and the number of moles of Ga (MGa/(MIn + MGa)) may be in the range of about 0.02 to about 0.18, and the ratio of the sum of the number of moles of In and the number of moles of Ga to the number of moles of P ((MIn + MGa)/MP) may be in the range of about 1 to about 1.2 in the core and the shell.
提供了量子点、制造量子点的方法、光学构件和电子设备。量子点可以包括核和覆盖核的至少一部分的壳，其中核可以包括铟(In)、镓(Ga)和磷(P)，壳可以包括第II-VI族半导体化合物、第III-</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | ADHESIVES BLASTING CHEMISTRY DYES FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF HEATING LIGHTING MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MECHANICAL ENGINEERING METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NANOTECHNOLOGY NATURAL RESINS PAINTS PERFORMING OPERATIONS POLISHES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR TRANSPORTING WEAPONS |
| title | Quantum dot, method of manufacturing quantum dot, optical member, and electronic device |
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