Preparation method of inverted pyramid structure on surface of crystalline silicon

The invention discloses a preparation method of an inverted pyramid structure on the surface of crystalline silicon, and belongs to the technical field of new materials. The invention provides a novel crystalline silicon surface corrosion method by improving an alkali corrosion method in the prepara...

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Hauptverfasser: PENG KUIQING, HUO CHENLIANG
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creator PENG KUIQING
HUO CHENLIANG
description The invention discloses a preparation method of an inverted pyramid structure on the surface of crystalline silicon, and belongs to the technical field of new materials. The invention provides a novel crystalline silicon surface corrosion method by improving an alkali corrosion method in the preparation process of a solar cell, and the novel crystalline silicon surface corrosion method can be used for preparing a large-area micro-nano-scale inverted pyramid array textured structure on the surface of crystalline silicon. The technology is simple and easy to implement, does not need an acidic solution, is low in cost and pollution-free, and can be used for industrial production, and the prepared large-area micro-nano-scale inverted pyramid array suede is excellent in light absorption performance, thereby having wide application prospects in the fields of solar cells and the like. 本发明公开了一种晶体硅表面倒金字塔结构制备方法,属于新材料技术领域。本发明通过对太阳能电池制备过程中的碱腐蚀方法进行改进,提出了一种新型的晶体硅表面腐蚀方法,可用于晶体硅表面大面积微纳米尺度倒金字塔阵列绒面结构制备。该技术简单易行,不需要酸性溶液,成本低廉无污染,可
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subjects ADHESIVES
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title Preparation method of inverted pyramid structure on surface of crystalline silicon
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