Saturable absorption device, preparation method and low-threshold starting pulse mode-locked laser

According to the saturable absorption device, the preparation method and the low-threshold-value starting pulse mode-locked laser, the oriented growth high-quality bismuth-copper-selenium-oxygen single crystal is prepared through a chemical vapor transport method, and the high-quality bismuth-copper...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: DENG HAIQIN, LI JIE, ZHOU PU, XU JIANGMING, WU JIAN, LENG JINYONG, JIANG ZONGFU, YU QIANG, YANG ZIXIN
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:According to the saturable absorption device, the preparation method and the low-threshold-value starting pulse mode-locked laser, the oriented growth high-quality bismuth-copper-selenium-oxygen single crystal is prepared through a chemical vapor transport method, and the high-quality bismuth-copper-selenium-oxygen single crystal is simply and conveniently prepared into the saturable absorption device which can be applied to the pulse mode-locked laser. The ultra-short pulse laser can generate ultra-short pulse laser output, has high stability and signal-to-noise ratio, and is especially low in starting threshold. 本发明提出一种可饱和吸收器件、制备方法及低阈值启动脉冲锁模激光器,通过化学气相输运的方法制备定向生长高质量铋铜硒氧单晶,将高质量铋铜硒氧单晶简便地制成可饱和吸收器件能够应用于脉冲锁模激光器,可产生超短脉冲激光输出,具有较高的稳定性和信噪比,尤其启动阈值较低。