Feeding device applied to silicon carbide crystal growth furnace

The feeding device comprises a mounting plate, a plurality of mounting notches are formed in the two sides of the mounting plate correspondingly, one end of the mounting plate is fixedly connected with the bottom of a supporting cylinder, a vertical sliding opening is formed in one side of the suppo...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	XI YANGANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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