Semiconductor memory

The invention relates to the technical field of semiconductor memories, and provides a semiconductor memory. The semiconductor memory includes a substrate, a connection layer disposed on the substrate, and a capacitor structure disposed on the connection layer. The connection layer comprises a connection pad array, a peripheral structure adjacent to the connection pad array, and a plurality of first extension pads arranged between the peripheral structure and the connection pad array, and a part of the bottom electrode of the capacitor structure is arranged on the first extension pads, so that the peripheral part of the capacitor structure obtains more support, and the defect of deformation or collapse is reduced. 本发明涉及本半导体存储器技术领域，提供了一种半导体存储器。该半导体存储器包括衬底，设置在衬底上的连接层，以及设置在连接层上的电容结构。连接层包括连接垫阵列、邻近连接垫阵列的外围结构，以及排列在外围结构和连接垫阵列之间的多个第一延伸垫，其中电容结构的部分底电极被设置在第一延伸垫上，使电容结构的外围部分获得较多支撑，减少变形或倒塌的缺陷。