HEMT device and preparation method thereof

The invention provides an HEMT (High Electron Mobility Transistor) device and a preparation method thereof, the HEMT device comprises a substrate, a laminated structure, a first dielectric layer, a gate conductive layer, a second dielectric layer, a drain contact hole, a gate contact hole, a drain,...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LIANG HUINAN, REN YONGSHUO, WANG RONGHUA
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!