Method for realizing TSV (Through Silicon Via) complete filling by adopting glucose

The invention relates to the technical field of chip packaging, and particularly discloses a TSV (Through Silicon Via) complete filling method by adopting glucose, which comprises the steps of pretreatment, TSV chip infiltration, electroplating filling treatment and sample grinding, polishing and ob...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHU YAN, LI YULING, SUN WEI, WAN LI, WU ZHEYAN, XU RUN, JIANG SHILING, YANG SHUJIE, YUE YUPING, JIANG LAIXIN, ZHANG QIUXIANG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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