Method for realizing TSV (Through Silicon Via) complete filling by adopting glucose
The invention relates to the technical field of chip packaging, and particularly discloses a TSV (Through Silicon Via) complete filling method by adopting glucose, which comprises the steps of pretreatment, TSV chip infiltration, electroplating filling treatment and sample grinding, polishing and ob...
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| creator | ZHU YAN LI YULING SUN WEI WAN LI WU ZHEYAN XU RUN JIANG SHILING YANG SHUJIE YUE YUPING JIANG LAIXIN ZHANG QIUXIANG |
| description | The invention relates to the technical field of chip packaging, and particularly discloses a TSV (Through Silicon Via) complete filling method by adopting glucose, which comprises the steps of pretreatment, TSV chip infiltration, electroplating filling treatment and sample grinding, polishing and observation treatment. According to the invention, the condition that an organic additive of a traditional high polymer material is used as an inhibitor is abandoned, the glucose which is more environment-friendly, does not fear a cold human body and is low in price is used as the inhibitor to carry out electroplating filling operation on the TSV chip, meanwhile, the environment is protected, the pinch-off phenomenon is avoided, and the production efficiency is improved. And the problem that the copper layer has micro cracks or micro holes is solved, and the product quality is not influenced. The method is simple, and the requirement for equipment is low.
本公开涉及芯片封装技术领域，具体公开一种采用葡萄糖实现TSV完全填充方法，包括进行预处理、浸润TSV芯片、进行电镀填充处理和 |
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本公开涉及芯片封装技术领域，具体公开一种采用葡萄糖实现TSV完全填充方法，包括进行预处理、浸润TSV芯片、进行电镀填充处理和</description><language>chi ; eng</language><subject>APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230901&DB=EPODOC&CC=CN&NR=116682785A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230901&DB=EPODOC&CC=CN&NR=116682785A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ZHU YAN</creatorcontrib><creatorcontrib>LI YULING</creatorcontrib><creatorcontrib>SUN WEI</creatorcontrib><creatorcontrib>WAN LI</creatorcontrib><creatorcontrib>WU ZHEYAN</creatorcontrib><creatorcontrib>XU RUN</creatorcontrib><creatorcontrib>JIANG SHILING</creatorcontrib><creatorcontrib>YANG SHUJIE</creatorcontrib><creatorcontrib>YUE YUPING</creatorcontrib><creatorcontrib>JIANG LAIXIN</creatorcontrib><creatorcontrib>ZHANG QIUXIANG</creatorcontrib><title>Method for realizing TSV (Through Silicon Via) complete filling by adopting glucose</title><description>The invention relates to the technical field of chip packaging, and particularly discloses a TSV (Through Silicon Via) complete filling method by adopting glucose, which comprises the steps of pretreatment, TSV chip infiltration, electroplating filling treatment and sample grinding, polishing and observation treatment. According to the invention, the condition that an organic additive of a traditional high polymer material is used as an inhibitor is abandoned, the glucose which is more environment-friendly, does not fear a cold human body and is low in price is used as the inhibitor to carry out electroplating filling operation on the TSV chip, meanwhile, the environment is protected, the pinch-off phenomenon is avoided, and the production efficiency is improved. And the problem that the copper layer has micro cracks or micro holes is solved, and the product quality is not influenced. The method is simple, and the requirement for equipment is low.
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本公开涉及芯片封装技术领域，具体公开一种采用葡萄糖实现TSV完全填充方法，包括进行预处理、浸润TSV芯片、进行电镀填充处理和</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES |
| title | Method for realizing TSV (Through Silicon Via) complete filling by adopting glucose |
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