Method for improving focused ion beam FIB etching morphology quality

The embodiment of the invention relates to a method for improving focused ion beam FIB etching morphology quality. The method comprises the following steps: manufacturing a mask layer on a sample to be etched; fixing a sample to be etched on the FIB etching base; in the FIB etching process, the FIB etching base is heated and rotates in a horizontal plane or a non-horizontal plane, so that the to-be-etched sample rotates at multiple angles, and the same or different FIB etching time is kept at each rotation angle; in the FIB etching process or after FIB etching, auxiliary etching is carried out on the sample to be etched; and removing the mask layer. 本发明实施例涉及一种提高聚焦离子束FIB刻蚀形貌质量的方法，包括：在待刻蚀样本上制作掩膜层；将待刻蚀样本固定在FIB刻蚀基座上；在FIB刻蚀过程中，对所述FIB刻蚀基座进行加热，并在水平面或非水平面内进行旋转，使得待刻蚀样本发生多角度旋转，并在每个旋转角度上保持相同或不同的FIB刻蚀时间；在FIB刻蚀过程中或FIB刻蚀之后，对所述待刻蚀样本进行辅助刻蚀；去除所述掩膜层。