High-voltage half-bridge driving chip and packaging structure thereof
The invention belongs to the technical field of integrated circuits, and particularly relates to a high-voltage half-bridge driving chip and a packaging structure. The circuit is characterized by comprising a high-voltage side driving chip, a low-voltage side driving chip, an MOS tube Q1 and an MOS...
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| creator | MA PEI ZHANG FENG JIA HUAIBIN |
| description | The invention belongs to the technical field of integrated circuits, and particularly relates to a high-voltage half-bridge driving chip and a packaging structure. The circuit is characterized by comprising a high-voltage side driving chip, a low-voltage side driving chip, an MOS tube Q1 and an MOS tube Q2, the high-voltage side driving chip and the low-voltage side driving chip are both adaptively connected with the MOS tube Q1 and the MOS tube Q2, and the low-voltage side driving chip transmits pulse control signals to the high-voltage side driving chip through the MOS tube Q1 and the MOS tube Q2. The high-voltage side driving chip and the low-voltage side driving chip are prepared by adopting a low-voltage process, substrates of the high-voltage side driving chip and the low-voltage side driving chip are P-type, and the high-voltage side driving chip and the low-voltage side driving chip are connected to the bottom metal base island through conductive adhesive. And the MOS tube Q1 and the MOS tube Q2 are p |
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The circuit is characterized by comprising a high-voltage side driving chip, a low-voltage side driving chip, an MOS tube Q1 and an MOS tube Q2, the high-voltage side driving chip and the low-voltage side driving chip are both adaptively connected with the MOS tube Q1 and the MOS tube Q2, and the low-voltage side driving chip transmits pulse control signals to the high-voltage side driving chip through the MOS tube Q1 and the MOS tube Q2. The high-voltage side driving chip and the low-voltage side driving chip are prepared by adopting a low-voltage process, substrates of the high-voltage side driving chip and the low-voltage side driving chip are P-type, and the high-voltage side driving chip and the low-voltage side driving chip are connected to the bottom metal base island through conductive adhesive. 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The circuit is characterized by comprising a high-voltage side driving chip, a low-voltage side driving chip, an MOS tube Q1 and an MOS tube Q2, the high-voltage side driving chip and the low-voltage side driving chip are both adaptively connected with the MOS tube Q1 and the MOS tube Q2, and the low-voltage side driving chip transmits pulse control signals to the high-voltage side driving chip through the MOS tube Q1 and the MOS tube Q2. The high-voltage side driving chip and the low-voltage side driving chip are prepared by adopting a low-voltage process, substrates of the high-voltage side driving chip and the low-voltage side driving chip are P-type, and the high-voltage side driving chip and the low-voltage side driving chip are connected to the bottom metal base island through conductive adhesive. 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The circuit is characterized by comprising a high-voltage side driving chip, a low-voltage side driving chip, an MOS tube Q1 and an MOS tube Q2, the high-voltage side driving chip and the low-voltage side driving chip are both adaptively connected with the MOS tube Q1 and the MOS tube Q2, and the low-voltage side driving chip transmits pulse control signals to the high-voltage side driving chip through the MOS tube Q1 and the MOS tube Q2. The high-voltage side driving chip and the low-voltage side driving chip are prepared by adopting a low-voltage process, substrates of the high-voltage side driving chip and the low-voltage side driving chip are P-type, and the high-voltage side driving chip and the low-voltage side driving chip are connected to the bottom metal base island through conductive adhesive. And the MOS tube Q1 and the MOS tube Q2 are p</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION SEMICONDUCTOR DEVICES |
| title | High-voltage half-bridge driving chip and packaging structure thereof |
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