Self-triggering SCR device
The self-triggering SCR device comprises a P substrate, and a first P + injection region, a first grid electrode, a second P + injection region, a first groove, a first N + injection region, a second grid electrode, a second N + injection region, a second groove and a third P + injection region are...
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| creator | WANG XIN WANG PEIPEI YANG ZHAONIAN LONG TENG |
| description | The self-triggering SCR device comprises a P substrate, and a first P + injection region, a first grid electrode, a second P + injection region, a first groove, a first N + injection region, a second grid electrode, a second N + injection region, a second groove and a third P + injection region are sequentially arranged on the upper surface of the P substrate; an N well is arranged under the first P + injection region, the first grid electrode, the second P + injection region, the first groove and part of the first N + injection region; meanwhile, a P well is arranged below the other part of the first N + injection region, the second grid electrode, the second N + injection region, the second groove and the third P + injection region. According to the SCR device disclosed by the invention, through structural improvement and overall optimization, the SCR device has a smaller area.
本发明公开了一种自触发的SCR器件，包括P衬底，在P衬底上表面依序分别设置有第一P+注入区、第一栅极、第二P+注入区、第一沟槽、第一N+注入区、第二栅极、第二N+注入区、第二沟槽、第三P+注入区；并且在第一P+注入区、第一栅极、第二P+注入区、第一沟槽和部分第一 |
| format | Patent |
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本发明公开了一种自触发的SCR器件，包括P衬底，在P衬底上表面依序分别设置有第一P+注入区、第一栅极、第二P+注入区、第一沟槽、第一N+注入区、第二栅极、第二N+注入区、第二沟槽、第三P+注入区；并且在第一P+注入区、第一栅极、第二P+注入区、第一沟槽和部分第一</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230829&DB=EPODOC&CC=CN&NR=116666378A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230829&DB=EPODOC&CC=CN&NR=116666378A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WANG XIN</creatorcontrib><creatorcontrib>WANG PEIPEI</creatorcontrib><creatorcontrib>YANG ZHAONIAN</creatorcontrib><creatorcontrib>LONG TENG</creatorcontrib><title>Self-triggering SCR device</title><description>The self-triggering SCR device comprises a P substrate, and a first P + injection region, a first grid electrode, a second P + injection region, a first groove, a first N + injection region, a second grid electrode, a second N + injection region, a second groove and a third P + injection region are sequentially arranged on the upper surface of the P substrate; an N well is arranged under the first P + injection region, the first grid electrode, the second P + injection region, the first groove and part of the first N + injection region; meanwhile, a P well is arranged below the other part of the first N + injection region, the second grid electrode, the second N + injection region, the second groove and the third P + injection region. According to the SCR device disclosed by the invention, through structural improvement and overall optimization, the SCR device has a smaller area.
本发明公开了一种自触发的SCR器件，包括P衬底，在P衬底上表面依序分别设置有第一P+注入区、第一栅极、第二P+注入区、第一沟槽、第一N+注入区、第二栅极、第二N+注入区、第二沟槽、第三P+注入区；并且在第一P+注入区、第一栅极、第二P+注入区、第一沟槽和部分第一</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAKTs1J0y0pykxPTy3KzEtXCHYOUkhJLctMTuVhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGZkBgbG7haEyMGgAb6yKa</recordid><startdate>20230829</startdate><enddate>20230829</enddate><creator>WANG XIN</creator><creator>WANG PEIPEI</creator><creator>YANG ZHAONIAN</creator><creator>LONG TENG</creator><scope>EVB</scope></search><sort><creationdate>20230829</creationdate><title>Self-triggering SCR device</title><author>WANG XIN ; WANG PEIPEI ; YANG ZHAONIAN ; LONG TENG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116666378A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>WANG XIN</creatorcontrib><creatorcontrib>WANG PEIPEI</creatorcontrib><creatorcontrib>YANG ZHAONIAN</creatorcontrib><creatorcontrib>LONG TENG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WANG XIN</au><au>WANG PEIPEI</au><au>YANG ZHAONIAN</au><au>LONG TENG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Self-triggering SCR device</title><date>2023-08-29</date><risdate>2023</risdate><abstract>The self-triggering SCR device comprises a P substrate, and a first P + injection region, a first grid electrode, a second P + injection region, a first groove, a first N + injection region, a second grid electrode, a second N + injection region, a second groove and a third P + injection region are sequentially arranged on the upper surface of the P substrate; an N well is arranged under the first P + injection region, the first grid electrode, the second P + injection region, the first groove and part of the first N + injection region; meanwhile, a P well is arranged below the other part of the first N + injection region, the second grid electrode, the second N + injection region, the second groove and the third P + injection region. According to the SCR device disclosed by the invention, through structural improvement and overall optimization, the SCR device has a smaller area.
本发明公开了一种自触发的SCR器件，包括P衬底，在P衬底上表面依序分别设置有第一P+注入区、第一栅极、第二P+注入区、第一沟槽、第一N+注入区、第二栅极、第二N+注入区、第二沟槽、第三P+注入区；并且在第一P+注入区、第一栅极、第二P+注入区、第一沟槽和部分第一</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Self-triggering SCR device |
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