3C silicon carbide diode device structure on silicon substrate and preparation method thereof

The invention discloses a 3C silicon carbide diode device structure on a silicon substrate, which comprises a p-type lightly-doped silicon substrate, and an n-type highly-doped 3C silicon carbide epitaxial layer and an n-type doped 3C silicon carbide drift layer are sequentially arranged above the p...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WANG ZHIHAN, YU SHUANGBAI, WEN ZHENGXIN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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