3C silicon carbide diode device structure on silicon substrate and preparation method thereof
The invention discloses a 3C silicon carbide diode device structure on a silicon substrate, which comprises a p-type lightly-doped silicon substrate, and an n-type highly-doped 3C silicon carbide epitaxial layer and an n-type doped 3C silicon carbide drift layer are sequentially arranged above the p...
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| creator | WANG ZHIHAN YU SHUANGBAI WEN ZHENGXIN |
| description | The invention discloses a 3C silicon carbide diode device structure on a silicon substrate, which comprises a p-type lightly-doped silicon substrate, and an n-type highly-doped 3C silicon carbide epitaxial layer and an n-type doped 3C silicon carbide drift layer are sequentially arranged above the p-type lightly-doped silicon substrate. And a p-type junction region is arranged at the top of the 3C silicon carbide drift layer. The bottom of the p-type silicon substrate is provided with a groove structure, and the bottom of the groove extends to the n-type 3C silicon carbide epitaxial layer, so that the ohmic contact metal is in contact with the n-type 3C silicon carbide epitaxial layer. A silicon dioxide ILD structure is arranged above the n-type 3C silicon carbide drift layer, the middle of the silicon dioxide ILD structure is open, and Schottky contact metal and pad metal are sequentially filled in the silicon dioxide ILD structure. The pad metal is covered with a passivation layer, and a central opening of |
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And a p-type junction region is arranged at the top of the 3C silicon carbide drift layer. The bottom of the p-type silicon substrate is provided with a groove structure, and the bottom of the groove extends to the n-type 3C silicon carbide epitaxial layer, so that the ohmic contact metal is in contact with the n-type 3C silicon carbide epitaxial layer. A silicon dioxide ILD structure is arranged above the n-type 3C silicon carbide drift layer, the middle of the silicon dioxide ILD structure is open, and Schottky contact metal and pad metal are sequentially filled in the silicon dioxide ILD structure. 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And a p-type junction region is arranged at the top of the 3C silicon carbide drift layer. The bottom of the p-type silicon substrate is provided with a groove structure, and the bottom of the groove extends to the n-type 3C silicon carbide epitaxial layer, so that the ohmic contact metal is in contact with the n-type 3C silicon carbide epitaxial layer. A silicon dioxide ILD structure is arranged above the n-type 3C silicon carbide drift layer, the middle of the silicon dioxide ILD structure is open, and Schottky contact metal and pad metal are sequentially filled in the silicon dioxide ILD structure. 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And a p-type junction region is arranged at the top of the 3C silicon carbide drift layer. The bottom of the p-type silicon substrate is provided with a groove structure, and the bottom of the groove extends to the n-type 3C silicon carbide epitaxial layer, so that the ohmic contact metal is in contact with the n-type 3C silicon carbide epitaxial layer. A silicon dioxide ILD structure is arranged above the n-type 3C silicon carbide drift layer, the middle of the silicon dioxide ILD structure is open, and Schottky contact metal and pad metal are sequentially filled in the silicon dioxide ILD structure. The pad metal is covered with a passivation layer, and a central opening of</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | 3C silicon carbide diode device structure on silicon substrate and preparation method thereof |
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