Method for simulating laser damage dynamic behavior induced by surface defect in KDP crystal processing

The invention provides a dynamic behavior simulation method for laser damage induced by KDP crystal processing surface defects, and belongs to the technical field of engineering optics. The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields gen...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHEN GUANG, DING WENYU, LIU ZHICHAO, XU QIAO, LEI HONGQIN, WANG SHENGFEI, ZHAO LINJIE, HU JIANRUI, CHENG JIAN, CHEN MINGJUN
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CHEN GUANG
DING WENYU
LIU ZHICHAO
XU QIAO
LEI HONGQIN
WANG SHENGFEI
ZHAO LINJIE
HU JIANRUI
CHENG JIAN
CHEN MINGJUN
description The invention provides a dynamic behavior simulation method for laser damage induced by KDP crystal processing surface defects, and belongs to the technical field of engineering optics. The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields generated under laser irradiation on crystals, only a damage final-state morphology graph can be obtained, and the correlation between surface defects and damage cannot be revealed is solved. The method comprises the following steps: describing energy gathered in the KDP crystal by utilizing light intensity, introducing a light enhancement factor, establishing a finite element model and solving, establishing an energy deposition equation, describing damage fracture behaviors of the KDP crystal by adopting a JH model, selecting maximum tensile stress as a failure criterion of the KDP crystal, and further establishing a multi-physical field laser damage kinetic model. The effect of multiple physical fields on the crysta
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116629064A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116629064A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116629064A3</originalsourceid><addsrcrecordid>eNqNzEEKwjAQheFuXIh6h_EAglUpuJSqCKK4cF-mySQNpEnJJEJubxYewNVbvI9_XukHxcFLUD4AmzFZjMZpsMgUQOKImkBmh6MR0NOAH1OgcTIJktBn4BQUimJIkYjlgfv5BSJkjmhhCl4Qcykuq5lCy7T67aJaXy_v9rahyXfEU2k4il37rOum2R23zeG0_8d8AY-lP6Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method for simulating laser damage dynamic behavior induced by surface defect in KDP crystal processing</title><source>esp@cenet</source><creator>CHEN GUANG ; DING WENYU ; LIU ZHICHAO ; XU QIAO ; LEI HONGQIN ; WANG SHENGFEI ; ZHAO LINJIE ; HU JIANRUI ; CHENG JIAN ; CHEN MINGJUN</creator><creatorcontrib>CHEN GUANG ; DING WENYU ; LIU ZHICHAO ; XU QIAO ; LEI HONGQIN ; WANG SHENGFEI ; ZHAO LINJIE ; HU JIANRUI ; CHENG JIAN ; CHEN MINGJUN</creatorcontrib><description>The invention provides a dynamic behavior simulation method for laser damage induced by KDP crystal processing surface defects, and belongs to the technical field of engineering optics. The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields generated under laser irradiation on crystals, only a damage final-state morphology graph can be obtained, and the correlation between surface defects and damage cannot be revealed is solved. The method comprises the following steps: describing energy gathered in the KDP crystal by utilizing light intensity, introducing a light enhancement factor, establishing a finite element model and solving, establishing an energy deposition equation, describing damage fracture behaviors of the KDP crystal by adopting a JH model, selecting maximum tensile stress as a failure criterion of the KDP crystal, and further establishing a multi-physical field laser damage kinetic model. The effect of multiple physical fields on the crysta</description><language>chi ; eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS ; PHYSICS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230822&amp;DB=EPODOC&amp;CC=CN&amp;NR=116629064A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230822&amp;DB=EPODOC&amp;CC=CN&amp;NR=116629064A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHEN GUANG</creatorcontrib><creatorcontrib>DING WENYU</creatorcontrib><creatorcontrib>LIU ZHICHAO</creatorcontrib><creatorcontrib>XU QIAO</creatorcontrib><creatorcontrib>LEI HONGQIN</creatorcontrib><creatorcontrib>WANG SHENGFEI</creatorcontrib><creatorcontrib>ZHAO LINJIE</creatorcontrib><creatorcontrib>HU JIANRUI</creatorcontrib><creatorcontrib>CHENG JIAN</creatorcontrib><creatorcontrib>CHEN MINGJUN</creatorcontrib><title>Method for simulating laser damage dynamic behavior induced by surface defect in KDP crystal processing</title><description>The invention provides a dynamic behavior simulation method for laser damage induced by KDP crystal processing surface defects, and belongs to the technical field of engineering optics. The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields generated under laser irradiation on crystals, only a damage final-state morphology graph can be obtained, and the correlation between surface defects and damage cannot be revealed is solved. The method comprises the following steps: describing energy gathered in the KDP crystal by utilizing light intensity, introducing a light enhancement factor, establishing a finite element model and solving, establishing an energy deposition equation, describing damage fracture behaviors of the KDP crystal by adopting a JH model, selecting maximum tensile stress as a failure criterion of the KDP crystal, and further establishing a multi-physical field laser damage kinetic model. The effect of multiple physical fields on the crysta</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzEEKwjAQheFuXIh6h_EAglUpuJSqCKK4cF-mySQNpEnJJEJubxYewNVbvI9_XukHxcFLUD4AmzFZjMZpsMgUQOKImkBmh6MR0NOAH1OgcTIJktBn4BQUimJIkYjlgfv5BSJkjmhhCl4Qcykuq5lCy7T67aJaXy_v9rahyXfEU2k4il37rOum2R23zeG0_8d8AY-lP6Q</recordid><startdate>20230822</startdate><enddate>20230822</enddate><creator>CHEN GUANG</creator><creator>DING WENYU</creator><creator>LIU ZHICHAO</creator><creator>XU QIAO</creator><creator>LEI HONGQIN</creator><creator>WANG SHENGFEI</creator><creator>ZHAO LINJIE</creator><creator>HU JIANRUI</creator><creator>CHENG JIAN</creator><creator>CHEN MINGJUN</creator><scope>EVB</scope></search><sort><creationdate>20230822</creationdate><title>Method for simulating laser damage dynamic behavior induced by surface defect in KDP crystal processing</title><author>CHEN GUANG ; DING WENYU ; LIU ZHICHAO ; XU QIAO ; LEI HONGQIN ; WANG SHENGFEI ; ZHAO LINJIE ; HU JIANRUI ; CHENG JIAN ; CHEN MINGJUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116629064A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>CHEN GUANG</creatorcontrib><creatorcontrib>DING WENYU</creatorcontrib><creatorcontrib>LIU ZHICHAO</creatorcontrib><creatorcontrib>XU QIAO</creatorcontrib><creatorcontrib>LEI HONGQIN</creatorcontrib><creatorcontrib>WANG SHENGFEI</creatorcontrib><creatorcontrib>ZHAO LINJIE</creatorcontrib><creatorcontrib>HU JIANRUI</creatorcontrib><creatorcontrib>CHENG JIAN</creatorcontrib><creatorcontrib>CHEN MINGJUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHEN GUANG</au><au>DING WENYU</au><au>LIU ZHICHAO</au><au>XU QIAO</au><au>LEI HONGQIN</au><au>WANG SHENGFEI</au><au>ZHAO LINJIE</au><au>HU JIANRUI</au><au>CHENG JIAN</au><au>CHEN MINGJUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for simulating laser damage dynamic behavior induced by surface defect in KDP crystal processing</title><date>2023-08-22</date><risdate>2023</risdate><abstract>The invention provides a dynamic behavior simulation method for laser damage induced by KDP crystal processing surface defects, and belongs to the technical field of engineering optics. The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields generated under laser irradiation on crystals, only a damage final-state morphology graph can be obtained, and the correlation between surface defects and damage cannot be revealed is solved. The method comprises the following steps: describing energy gathered in the KDP crystal by utilizing light intensity, introducing a light enhancement factor, establishing a finite element model and solving, establishing an energy deposition equation, describing damage fracture behaviors of the KDP crystal by adopting a JH model, selecting maximum tensile stress as a failure criterion of the KDP crystal, and further establishing a multi-physical field laser damage kinetic model. The effect of multiple physical fields on the crysta</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN116629064A
source esp@cenet
subjects CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION AND COMMUNICATION TECHNOLOGY [ICT] SPECIALLY ADAPTEDFOR SPECIFIC APPLICATION FIELDS
PHYSICS
title Method for simulating laser damage dynamic behavior induced by surface defect in KDP crystal processing
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T02%3A08%3A43IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHEN%20GUANG&rft.date=2023-08-22&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116629064A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true