Method for simulating laser damage dynamic behavior induced by surface defect in KDP crystal processing
The invention provides a dynamic behavior simulation method for laser damage induced by KDP crystal processing surface defects, and belongs to the technical field of engineering optics. The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields gen...
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creator | CHEN GUANG DING WENYU LIU ZHICHAO XU QIAO LEI HONGQIN WANG SHENGFEI ZHAO LINJIE HU JIANRUI CHENG JIAN CHEN MINGJUN |
description | The invention provides a dynamic behavior simulation method for laser damage induced by KDP crystal processing surface defects, and belongs to the technical field of engineering optics. The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields generated under laser irradiation on crystals, only a damage final-state morphology graph can be obtained, and the correlation between surface defects and damage cannot be revealed is solved. The method comprises the following steps: describing energy gathered in the KDP crystal by utilizing light intensity, introducing a light enhancement factor, establishing a finite element model and solving, establishing an energy deposition equation, describing damage fracture behaviors of the KDP crystal by adopting a JH model, selecting maximum tensile stress as a failure criterion of the KDP crystal, and further establishing a multi-physical field laser damage kinetic model. The effect of multiple physical fields on the crysta |
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The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields generated under laser irradiation on crystals, only a damage final-state morphology graph can be obtained, and the correlation between surface defects and damage cannot be revealed is solved. The method comprises the following steps: describing energy gathered in the KDP crystal by utilizing light intensity, introducing a light enhancement factor, establishing a finite element model and solving, establishing an energy deposition equation, describing damage fracture behaviors of the KDP crystal by adopting a JH model, selecting maximum tensile stress as a failure criterion of the KDP crystal, and further establishing a multi-physical field laser damage kinetic model. 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The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields generated under laser irradiation on crystals, only a damage final-state morphology graph can be obtained, and the correlation between surface defects and damage cannot be revealed is solved. The method comprises the following steps: describing energy gathered in the KDP crystal by utilizing light intensity, introducing a light enhancement factor, establishing a finite element model and solving, establishing an energy deposition equation, describing damage fracture behaviors of the KDP crystal by adopting a JH model, selecting maximum tensile stress as a failure criterion of the KDP crystal, and further establishing a multi-physical field laser damage kinetic model. 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The problem that an existing KDP crystal damage model does not consider the effect of multiple physical fields generated under laser irradiation on crystals, only a damage final-state morphology graph can be obtained, and the correlation between surface defects and damage cannot be revealed is solved. The method comprises the following steps: describing energy gathered in the KDP crystal by utilizing light intensity, introducing a light enhancement factor, establishing a finite element model and solving, establishing an energy deposition equation, describing damage fracture behaviors of the KDP crystal by adopting a JH model, selecting maximum tensile stress as a failure criterion of the KDP crystal, and further establishing a multi-physical field laser damage kinetic model. The effect of multiple physical fields on the crysta</abstract><oa>free_for_read</oa></addata></record> |
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title | Method for simulating laser damage dynamic behavior induced by surface defect in KDP crystal processing |
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