Manufacturing method of high-density trench type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor)

The invention discloses a manufacturing method of a high-density trench type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), and belongs to the field of semiconductor power devices. The method comprises the following steps of: firstly realizing well region injection before a groove, adop...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	XU HAIMING, TANG XINYU, ZHANG QINGDONG, LIAO YUANBAO, XU ZHENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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