Semiconductor device and forming method thereof

Some embodiments provide a process for adjusting the sidewall profile of the gate opening prior to filling the replacement gate electrode layer therein, such that etch rate uniformity and stability are improved during a subsequent gate electrode etch back process. Specifically, the profile of the sa...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HUANG QIMING, LIN YULI, PAN CHENGWEI, LIU JUNYI, LYU ZHILUN, LIAO ZHITENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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