Semiconductor device, power conversion apparatus, and vehicle
The invention provides a semiconductor device, a power conversion apparatus, and a vehicle. The grid electrode of the semiconductor device is embedded into the semiconductor material, so that the cell size can be reduced. Moreover, the source electrode of the semiconductor device is in a groove type...
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| creator | HU FEI TANG LONGGU PENG YINGCHUN GAO BO JIAO CHUNKUN GUO ZHIYU |
| description | The invention provides a semiconductor device, a power conversion apparatus, and a vehicle. The grid electrode of the semiconductor device is embedded into the semiconductor material, so that the cell size can be reduced. Moreover, the source electrode of the semiconductor device is in a groove type, and the groove type source electrode is embedded into the semiconductor material and forms Schottky contact with the N-type doped region in the semiconductor material, thereby optimizing the short plate of the existing super-junction SiCMOSFET. In addition, the semiconductor device further comprises a shielding region, so that a trench gate dielectric electric field and a Schottky contact surface electric field can be shielded, the working reliability of the device gate is improved, and reverse voltage-withstanding electric leakage of the device is inhibited.
本申请提供了一种半导体器件、功率转换设备和车辆。该半导体器件的栅极嵌入到半导体材料中，从而可以减小元胞尺寸。并且，该半导体器件的源极呈沟槽型，沟槽型源极嵌入到半导体材料中，并与半导体材料中的N型掺杂区形成肖特基接触，从而对现有的超结SiCMOSFET的短板进行优化。此外，该半导体器件还包括屏蔽区，从而能够屏蔽沟 |
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本申请提供了一种半导体器件、功率转换设备和车辆。该半导体器件的栅极嵌入到半导体材料中，从而可以减小元胞尺寸。并且，该半导体器件的源极呈沟槽型，沟槽型源极嵌入到半导体材料中，并与半导体材料中的N型掺杂区形成肖特基接触，从而对现有的超结SiCMOSFET的短板进行优化。此外，该半导体器件还包括屏蔽区，从而能够屏蔽沟</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230725&DB=EPODOC&CC=CN&NR=116487436A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230725&DB=EPODOC&CC=CN&NR=116487436A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HU FEI</creatorcontrib><creatorcontrib>TANG LONGGU</creatorcontrib><creatorcontrib>PENG YINGCHUN</creatorcontrib><creatorcontrib>GAO BO</creatorcontrib><creatorcontrib>JIAO CHUNKUN</creatorcontrib><creatorcontrib>GUO ZHIYU</creatorcontrib><title>Semiconductor device, power conversion apparatus, and vehicle</title><description>The invention provides a semiconductor device, a power conversion apparatus, and a vehicle. The grid electrode of the semiconductor device is embedded into the semiconductor material, so that the cell size can be reduced. Moreover, the source electrode of the semiconductor device is in a groove type, and the groove type source electrode is embedded into the semiconductor material and forms Schottky contact with the N-type doped region in the semiconductor material, thereby optimizing the short plate of the existing super-junction SiCMOSFET. In addition, the semiconductor device further comprises a shielding region, so that a trench gate dielectric electric field and a Schottky contact surface electric field can be shielded, the working reliability of the device gate is improved, and reverse voltage-withstanding electric leakage of the device is inhibited.
本申请提供了一种半导体器件、功率转换设备和车辆。该半导体器件的栅极嵌入到半导体材料中，从而可以减小元胞尺寸。并且，该半导体器件的源极呈沟槽型，沟槽型源极嵌入到半导体材料中，并与半导体材料中的N型掺杂区形成肖特基接触，从而对现有的超结SiCMOSFET的短板进行优化。此外，该半导体器件还包括屏蔽区，从而能够屏蔽沟</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLANTs3NTM7PSylNLskvUkhJLctMTtVRKMgvTy1SAIqXpRYVZ-bnKSQWFCQWJZaUFusoJOalKJSlZmQm56TyMLCmJeYUp_JCaW4GRTfXEGcP3dSC_PjU4oLE5NS81JJ4Zz9DQzMTC3MTYzNHY2LUAABDFzBy</recordid><startdate>20230725</startdate><enddate>20230725</enddate><creator>HU FEI</creator><creator>TANG LONGGU</creator><creator>PENG YINGCHUN</creator><creator>GAO BO</creator><creator>JIAO CHUNKUN</creator><creator>GUO ZHIYU</creator><scope>EVB</scope></search><sort><creationdate>20230725</creationdate><title>Semiconductor device, power conversion apparatus, and vehicle</title><author>HU FEI ; TANG LONGGU ; PENG YINGCHUN ; GAO BO ; JIAO CHUNKUN ; GUO ZHIYU</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116487436A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HU FEI</creatorcontrib><creatorcontrib>TANG LONGGU</creatorcontrib><creatorcontrib>PENG YINGCHUN</creatorcontrib><creatorcontrib>GAO BO</creatorcontrib><creatorcontrib>JIAO CHUNKUN</creatorcontrib><creatorcontrib>GUO ZHIYU</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HU FEI</au><au>TANG LONGGU</au><au>PENG YINGCHUN</au><au>GAO BO</au><au>JIAO CHUNKUN</au><au>GUO ZHIYU</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device, power conversion apparatus, and vehicle</title><date>2023-07-25</date><risdate>2023</risdate><abstract>The invention provides a semiconductor device, a power conversion apparatus, and a vehicle. The grid electrode of the semiconductor device is embedded into the semiconductor material, so that the cell size can be reduced. Moreover, the source electrode of the semiconductor device is in a groove type, and the groove type source electrode is embedded into the semiconductor material and forms Schottky contact with the N-type doped region in the semiconductor material, thereby optimizing the short plate of the existing super-junction SiCMOSFET. In addition, the semiconductor device further comprises a shielding region, so that a trench gate dielectric electric field and a Schottky contact surface electric field can be shielded, the working reliability of the device gate is improved, and reverse voltage-withstanding electric leakage of the device is inhibited.
本申请提供了一种半导体器件、功率转换设备和车辆。该半导体器件的栅极嵌入到半导体材料中，从而可以减小元胞尺寸。并且，该半导体器件的源极呈沟槽型，沟槽型源极嵌入到半导体材料中，并与半导体材料中的N型掺杂区形成肖特基接触，从而对现有的超结SiCMOSFET的短板进行优化。此外，该半导体器件还包括屏蔽区，从而能够屏蔽沟</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor device, power conversion apparatus, and vehicle |
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