Preparation method of three-band laminated superlattice detector chip

The invention introduces a preparation method of a three-waveband laminated superlattice detector chip, which comprises the following steps: carrying out mesa size corrosion on a three-waveband superlattice material by adopting dry etching and wet etching together to manufacture a step with a smooth surface, high flatness and a steep side wall so as to meet the electrical property and the proceeding of a subsequent process; set dry etching parameters are adopted, side wall undercutting caused by deep mesa corrosion is reduced through dry etching, and normal proceeding of subsequent procedures is guaranteed; and then wet etching is adopted to enable the surface of the chip to be flat and smooth, a damaged layer formed on the surface subjected to dry etching is removed, polymer deposition generated in a channel in the dry etching is prevented from influencing the performance of a diode, the area of a photosensitive element is increased, and the detection rate of the device is improved. 本发明介绍了一种三波段叠层超晶格探测器芯片的制备方