Image sensor device and forming method thereof

Embodiments of the invention provide an image sensor device and a method of forming the same. The method includes forming a mask layer on a back side of a substrate, the substrate including a pixel region having a photodetector, a transistor on or in a front side of the substrate; forming a mask ope...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LIU JIAHONG, KONG SHUYAN, ZHANG WEILING, ZHUANG SHENGJIE, CHEN JUNZHANG, LIU MINGQI, CAO CHUNKAI
Format: Patent
Sprache:chi ; eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator LIU JIAHONG
KONG SHUYAN
ZHANG WEILING
ZHUANG SHENGJIE
CHEN JUNZHANG
LIU MINGQI
CAO CHUNKAI
description Embodiments of the invention provide an image sensor device and a method of forming the same. The method includes forming a mask layer on a back side of a substrate, the substrate including a pixel region having a photodetector, a transistor on or in a front side of the substrate; forming a mask opening in the mask layer by exposing the mask layer to the patterned light, the mask opening including: a mask pixel region of the mask pixel region; and a mask protrusion region extending from the mask pixel region to the mask intersection region; etching the substrate through the mask opening, forming a substrate opening in the substrate; an isolation structure is formed in the substrate opening. 本申请的实施例提供了图像传感器器件及其形成方法。方法包括:在衬底的背侧上形成掩模层,该衬底包括具有光电探测器的像素区域,晶体管位于衬底的前侧之上或之中;通过将掩蔽层暴露于图案化的光而在掩蔽层中形成掩蔽开口,掩模开口包括:掩蔽像素区域的掩蔽像素区域;以及从掩模像素区域向掩模交叉区域延伸的掩模突起区域;通过掩模开口蚀刻衬底,在衬底中形成衬底开口;在衬底开口中形成隔离结构。
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116454100A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116454100A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116454100A3</originalsourceid><addsrcrecordid>eNrjZNDzzE1MT1UoTs0rzi9SSEkty0xOVUjMS1FIyy_KzcxLV8hNLcnIT1EoyUgtSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoZmJqYmhgYGjsbEqAEA3TUqQQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Image sensor device and forming method thereof</title><source>esp@cenet</source><creator>LIU JIAHONG ; KONG SHUYAN ; ZHANG WEILING ; ZHUANG SHENGJIE ; CHEN JUNZHANG ; LIU MINGQI ; CAO CHUNKAI</creator><creatorcontrib>LIU JIAHONG ; KONG SHUYAN ; ZHANG WEILING ; ZHUANG SHENGJIE ; CHEN JUNZHANG ; LIU MINGQI ; CAO CHUNKAI</creatorcontrib><description>Embodiments of the invention provide an image sensor device and a method of forming the same. The method includes forming a mask layer on a back side of a substrate, the substrate including a pixel region having a photodetector, a transistor on or in a front side of the substrate; forming a mask opening in the mask layer by exposing the mask layer to the patterned light, the mask opening including: a mask pixel region of the mask pixel region; and a mask protrusion region extending from the mask pixel region to the mask intersection region; etching the substrate through the mask opening, forming a substrate opening in the substrate; an isolation structure is formed in the substrate opening. 本申请的实施例提供了图像传感器器件及其形成方法。方法包括:在衬底的背侧上形成掩模层,该衬底包括具有光电探测器的像素区域,晶体管位于衬底的前侧之上或之中;通过将掩蔽层暴露于图案化的光而在掩蔽层中形成掩蔽开口,掩模开口包括:掩蔽像素区域的掩蔽像素区域;以及从掩模像素区域向掩模交叉区域延伸的掩模突起区域;通过掩模开口蚀刻衬底,在衬底中形成衬底开口;在衬底开口中形成隔离结构。</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230718&amp;DB=EPODOC&amp;CC=CN&amp;NR=116454100A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230718&amp;DB=EPODOC&amp;CC=CN&amp;NR=116454100A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIU JIAHONG</creatorcontrib><creatorcontrib>KONG SHUYAN</creatorcontrib><creatorcontrib>ZHANG WEILING</creatorcontrib><creatorcontrib>ZHUANG SHENGJIE</creatorcontrib><creatorcontrib>CHEN JUNZHANG</creatorcontrib><creatorcontrib>LIU MINGQI</creatorcontrib><creatorcontrib>CAO CHUNKAI</creatorcontrib><title>Image sensor device and forming method thereof</title><description>Embodiments of the invention provide an image sensor device and a method of forming the same. The method includes forming a mask layer on a back side of a substrate, the substrate including a pixel region having a photodetector, a transistor on or in a front side of the substrate; forming a mask opening in the mask layer by exposing the mask layer to the patterned light, the mask opening including: a mask pixel region of the mask pixel region; and a mask protrusion region extending from the mask pixel region to the mask intersection region; etching the substrate through the mask opening, forming a substrate opening in the substrate; an isolation structure is formed in the substrate opening. 本申请的实施例提供了图像传感器器件及其形成方法。方法包括:在衬底的背侧上形成掩模层,该衬底包括具有光电探测器的像素区域,晶体管位于衬底的前侧之上或之中;通过将掩蔽层暴露于图案化的光而在掩蔽层中形成掩蔽开口,掩模开口包括:掩蔽像素区域的掩蔽像素区域;以及从掩模像素区域向掩模交叉区域延伸的掩模突起区域;通过掩模开口蚀刻衬底,在衬底中形成衬底开口;在衬底开口中形成隔离结构。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDzzE1MT1UoTs0rzi9SSEkty0xOVUjMS1FIyy_KzcxLV8hNLcnIT1EoyUgtSs1P42FgTUvMKU7lhdLcDIpuriHOHrqpBfnxqcUFicmpeakl8c5-hoZmJqYmhgYGjsbEqAEA3TUqQQ</recordid><startdate>20230718</startdate><enddate>20230718</enddate><creator>LIU JIAHONG</creator><creator>KONG SHUYAN</creator><creator>ZHANG WEILING</creator><creator>ZHUANG SHENGJIE</creator><creator>CHEN JUNZHANG</creator><creator>LIU MINGQI</creator><creator>CAO CHUNKAI</creator><scope>EVB</scope></search><sort><creationdate>20230718</creationdate><title>Image sensor device and forming method thereof</title><author>LIU JIAHONG ; KONG SHUYAN ; ZHANG WEILING ; ZHUANG SHENGJIE ; CHEN JUNZHANG ; LIU MINGQI ; CAO CHUNKAI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116454100A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIU JIAHONG</creatorcontrib><creatorcontrib>KONG SHUYAN</creatorcontrib><creatorcontrib>ZHANG WEILING</creatorcontrib><creatorcontrib>ZHUANG SHENGJIE</creatorcontrib><creatorcontrib>CHEN JUNZHANG</creatorcontrib><creatorcontrib>LIU MINGQI</creatorcontrib><creatorcontrib>CAO CHUNKAI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIU JIAHONG</au><au>KONG SHUYAN</au><au>ZHANG WEILING</au><au>ZHUANG SHENGJIE</au><au>CHEN JUNZHANG</au><au>LIU MINGQI</au><au>CAO CHUNKAI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Image sensor device and forming method thereof</title><date>2023-07-18</date><risdate>2023</risdate><abstract>Embodiments of the invention provide an image sensor device and a method of forming the same. The method includes forming a mask layer on a back side of a substrate, the substrate including a pixel region having a photodetector, a transistor on or in a front side of the substrate; forming a mask opening in the mask layer by exposing the mask layer to the patterned light, the mask opening including: a mask pixel region of the mask pixel region; and a mask protrusion region extending from the mask pixel region to the mask intersection region; etching the substrate through the mask opening, forming a substrate opening in the substrate; an isolation structure is formed in the substrate opening. 本申请的实施例提供了图像传感器器件及其形成方法。方法包括:在衬底的背侧上形成掩模层,该衬底包括具有光电探测器的像素区域,晶体管位于衬底的前侧之上或之中;通过将掩蔽层暴露于图案化的光而在掩蔽层中形成掩蔽开口,掩模开口包括:掩蔽像素区域的掩蔽像素区域;以及从掩模像素区域向掩模交叉区域延伸的掩模突起区域;通过掩模开口蚀刻衬底,在衬底中形成衬底开口;在衬底开口中形成隔离结构。</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN116454100A
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Image sensor device and forming method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T16%3A42%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=LIU%20JIAHONG&rft.date=2023-07-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116454100A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true