Preparation method of deep hole metallization adapter plate

The invention discloses a preparation method of a deep hole metallization adapter plate. The preparation method comprises the following steps: processing a through hole in a substrate; a magnetron sputtering method is adopted to form a first seed layer which continuously and fully covers the upper s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ZHANG PING, YANG LEI, YUE BOYANG, HAN LICHANG, WEI MENG
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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