Method for rapidly determining content of impurity oxides in aluminum-silicon refractory material
The invention belongs to the technical field of sample element determination and analysis, and particularly relates to a method for rapidly determining the content of impurity oxides in an aluminum-silicon refractory material. According to the detection method disclosed by the invention, the propert...
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| creator | XIAN YUN CUI BOCHENG ZHANG YING LIU JUNZHU LI FANGJIE KOH JUN-HO MA XIAOHUI WANG DUO LIU YU |
| description | The invention belongs to the technical field of sample element determination and analysis, and particularly relates to a method for rapidly determining the content of impurity oxides in an aluminum-silicon refractory material. According to the detection method disclosed by the invention, the properties of the aluminum-silicon refractory material are combined, a mixed flux is adopted to melt a sample, a multi-element mixed standard solution (an Al2O3 matrix is added) is reasonably prepared according to the content range of analysis elements, and the impurity elements in the aluminum-silicon refractory material are simultaneously determined by an ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry) method. According to the detection method disclosed by the invention, the lengthy analysis process of a chemical method is avoided, the analysis time is greatly shortened, the consumption of reagents is reduced, the analysis cost is saved, and the method is rapid, simple, convenient, high in accuracy of |
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According to the detection method disclosed by the invention, the properties of the aluminum-silicon refractory material are combined, a mixed flux is adopted to melt a sample, a multi-element mixed standard solution (an Al2O3 matrix is added) is reasonably prepared according to the content range of analysis elements, and the impurity elements in the aluminum-silicon refractory material are simultaneously determined by an ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry) method. According to the detection method disclosed by the invention, the lengthy analysis process of a chemical method is avoided, the analysis time is greatly shortened, the consumption of reagents is reduced, the analysis cost is saved, and the method is rapid, simple, convenient, high in accuracy of</description><language>chi ; eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230704&DB=EPODOC&CC=CN&NR=116380878A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230704&DB=EPODOC&CC=CN&NR=116380878A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XIAN YUN</creatorcontrib><creatorcontrib>CUI BOCHENG</creatorcontrib><creatorcontrib>ZHANG YING</creatorcontrib><creatorcontrib>LIU JUNZHU</creatorcontrib><creatorcontrib>LI FANGJIE</creatorcontrib><creatorcontrib>KOH JUN-HO</creatorcontrib><creatorcontrib>MA XIAOHUI</creatorcontrib><creatorcontrib>WANG DUO</creatorcontrib><creatorcontrib>LIU YU</creatorcontrib><title>Method for rapidly determining content of impurity oxides in aluminum-silicon refractory material</title><description>The invention belongs to the technical field of sample element determination and analysis, and particularly relates to a method for rapidly determining the content of impurity oxides in an aluminum-silicon refractory material. According to the detection method disclosed by the invention, the properties of the aluminum-silicon refractory material are combined, a mixed flux is adopted to melt a sample, a multi-element mixed standard solution (an Al2O3 matrix is added) is reasonably prepared according to the content range of analysis elements, and the impurity elements in the aluminum-silicon refractory material are simultaneously determined by an ICP-AES (Inductively Coupled Plasma-Atomic Emission Spectrometry) method. 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| title | Method for rapidly determining content of impurity oxides in aluminum-silicon refractory material |
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