Microelectronic devices including cap structures and related electronic systems and methods

Microelectronic devices including cap structures and related electronic systems and methods

The invention relates to a microelectronic device including a cap structure and related electronic systems and methods. A microelectronic device includes: a source stack; a source contact vertically adjacent to the source stack; a semiconductor material vertically adjacent to the source contact; alt...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GREENLEE JORDAN D, LOMELI NANCY M, SCARBOROUGH ASHLEY N, HOPKINS JOHN D
Format: Patent
Sprache:chi ; eng
Schlagworte:
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator GREENLEE JORDAN D
LOMELI NANCY M
SCARBOROUGH ASHLEY N
HOPKINS JOHN D
description The invention relates to a microelectronic device including a cap structure and related electronic systems and methods. A microelectronic device includes: a source stack; a source contact vertically adjacent to the source stack; a semiconductor material vertically adjacent to the source contact; alternating levels of conductive material and dielectric material vertically adjacent to the semiconductor material; a dielectric structure within the slot structure and extending through the hierarchy of the microelectronic device to the source contact of the microelectronic device; an oxide cap structure laterally between the semiconductor material and the dielectric structure; and a pillar extending through the level, the semiconductor material, and the source contact and into the source stack. Related electronic systems and methods are also disclosed. 本申请涉及包含顶盖结构的微电子装置以及相关电子系统和方法。一种微电子装置包含：源极堆叠；源极接触件，其竖直地邻近于所述源极堆叠；半导体材料，其竖直地邻近于所述源极接触件；交替的导电材料和介电材料的层级，其竖直地邻近于所述半导体材料；介电结构，其在狭槽结构内且延伸穿过所述微电子装置的所述层级到所述微电子装置的所述源极接触件；氧化物
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116367550A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116367550A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116367550A3</originalsourceid><addsrcrecordid>eNqNi7EKAjEQBa-xEPUf1g8QPI47azkUG63sLI6weWogl4TsRvDvFbSwtJpiZqbV5eg4R3iw5hgck8XDMYRcYF-sCzdik0g0F9aS38IESxneKCz9fPIUxfjRI_QercyrydV4weLLWbXc7879YYUUB0gyjAAd-lNdd023adv1tvmneQHtVjxb</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Microelectronic devices including cap structures and related electronic systems and methods</title><source>esp@cenet</source><creator>GREENLEE JORDAN D ; LOMELI NANCY M ; SCARBOROUGH ASHLEY N ; HOPKINS JOHN D</creator><creatorcontrib>GREENLEE JORDAN D ; LOMELI NANCY M ; SCARBOROUGH ASHLEY N ; HOPKINS JOHN D</creatorcontrib><description>The invention relates to a microelectronic device including a cap structure and related electronic systems and methods. A microelectronic device includes: a source stack; a source contact vertically adjacent to the source stack; a semiconductor material vertically adjacent to the source contact; alternating levels of conductive material and dielectric material vertically adjacent to the semiconductor material; a dielectric structure within the slot structure and extending through the hierarchy of the microelectronic device to the source contact of the microelectronic device; an oxide cap structure laterally between the semiconductor material and the dielectric structure; and a pillar extending through the level, the semiconductor material, and the source contact and into the source stack. Related electronic systems and methods are also disclosed. 本申请涉及包含顶盖结构的微电子装置以及相关电子系统和方法。一种微电子装置包含：源极堆叠；源极接触件，其竖直地邻近于所述源极堆叠；半导体材料，其竖直地邻近于所述源极接触件；交替的导电材料和介电材料的层级，其竖直地邻近于所述半导体材料；介电结构，其在狭槽结构内且延伸穿过所述微电子装置的所述层级到所述微电子装置的所述源极接触件；氧化物</description><language>chi ; eng</language><subject>ELECTRICITY</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230630&amp;DB=EPODOC&amp;CC=CN&amp;NR=116367550A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230630&amp;DB=EPODOC&amp;CC=CN&amp;NR=116367550A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GREENLEE JORDAN D</creatorcontrib><creatorcontrib>LOMELI NANCY M</creatorcontrib><creatorcontrib>SCARBOROUGH ASHLEY N</creatorcontrib><creatorcontrib>HOPKINS JOHN D</creatorcontrib><title>Microelectronic devices including cap structures and related electronic systems and methods</title><description>The invention relates to a microelectronic device including a cap structure and related electronic systems and methods. A microelectronic device includes: a source stack; a source contact vertically adjacent to the source stack; a semiconductor material vertically adjacent to the source contact; alternating levels of conductive material and dielectric material vertically adjacent to the semiconductor material; a dielectric structure within the slot structure and extending through the hierarchy of the microelectronic device to the source contact of the microelectronic device; an oxide cap structure laterally between the semiconductor material and the dielectric structure; and a pillar extending through the level, the semiconductor material, and the source contact and into the source stack. Related electronic systems and methods are also disclosed. 本申请涉及包含顶盖结构的微电子装置以及相关电子系统和方法。一种微电子装置包含：源极堆叠；源极接触件，其竖直地邻近于所述源极堆叠；半导体材料，其竖直地邻近于所述源极接触件；交替的导电材料和介电材料的层级，其竖直地邻近于所述半导体材料；介电结构，其在狭槽结构内且延伸穿过所述微电子装置的所述层级到所述微电子装置的所述源极接触件；氧化物</description><subject>ELECTRICITY</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi7EKAjEQBa-xEPUf1g8QPI47azkUG63sLI6weWogl4TsRvDvFbSwtJpiZqbV5eg4R3iw5hgck8XDMYRcYF-sCzdik0g0F9aS38IESxneKCz9fPIUxfjRI_QercyrydV4weLLWbXc7879YYUUB0gyjAAd-lNdd023adv1tvmneQHtVjxb</recordid><startdate>20230630</startdate><enddate>20230630</enddate><creator>GREENLEE JORDAN D</creator><creator>LOMELI NANCY M</creator><creator>SCARBOROUGH ASHLEY N</creator><creator>HOPKINS JOHN D</creator><scope>EVB</scope></search><sort><creationdate>20230630</creationdate><title>Microelectronic devices including cap structures and related electronic systems and methods</title><author>GREENLEE JORDAN D ; LOMELI NANCY M ; SCARBOROUGH ASHLEY N ; HOPKINS JOHN D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116367550A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>ELECTRICITY</topic><toplevel>online_resources</toplevel><creatorcontrib>GREENLEE JORDAN D</creatorcontrib><creatorcontrib>LOMELI NANCY M</creatorcontrib><creatorcontrib>SCARBOROUGH ASHLEY N</creatorcontrib><creatorcontrib>HOPKINS JOHN D</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GREENLEE JORDAN D</au><au>LOMELI NANCY M</au><au>SCARBOROUGH ASHLEY N</au><au>HOPKINS JOHN D</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Microelectronic devices including cap structures and related electronic systems and methods</title><date>2023-06-30</date><risdate>2023</risdate><abstract>The invention relates to a microelectronic device including a cap structure and related electronic systems and methods. A microelectronic device includes: a source stack; a source contact vertically adjacent to the source stack; a semiconductor material vertically adjacent to the source contact; alternating levels of conductive material and dielectric material vertically adjacent to the semiconductor material; a dielectric structure within the slot structure and extending through the hierarchy of the microelectronic device to the source contact of the microelectronic device; an oxide cap structure laterally between the semiconductor material and the dielectric structure; and a pillar extending through the level, the semiconductor material, and the source contact and into the source stack. Related electronic systems and methods are also disclosed. 本申请涉及包含顶盖结构的微电子装置以及相关电子系统和方法。一种微电子装置包含：源极堆叠；源极接触件，其竖直地邻近于所述源极堆叠；半导体材料，其竖直地邻近于所述源极接触件；交替的导电材料和介电材料的层级，其竖直地邻近于所述半导体材料；介电结构，其在狭槽结构内且延伸穿过所述微电子装置的所述层级到所述微电子装置的所述源极接触件；氧化物</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language chi ; eng
recordid cdi_epo_espacenet_CN116367550A
source esp@cenet
subjects ELECTRICITY
title Microelectronic devices including cap structures and related electronic systems and methods
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T18%3A00%3A05IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GREENLEE%20JORDAN%20D&rft.date=2023-06-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116367550A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true