Preparation method of dual-active-layer oxide thin film transistor based on Li-doped zinc tin oxide

The invention discloses a preparation method of a dual-active-layer oxide thin film transistor based on Li-doped zinc tin oxide. The preparation method comprises the following steps: 1, etching a plurality of active layer deposition regions on a substrate through a photoetching stripping method; 2,...

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Bibliographische Detailangaben

Hauptverfasser:	YANG XIAOTIAN, WANG CHONG, LI DONGXU, GUO LIANG, CHU XUEFENG, YANG FAN, LYU SA, WANG SUHAO, GAO XIAOHONG, CHI YAODAN, WANG QING, WANG CHAO, YANG JIA, WANG HUAN
Format:	Patent
Sprache:	chi ; eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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