Preparation method of dual-active-layer oxide thin film transistor based on Li-doped zinc tin oxide
The invention discloses a preparation method of a dual-active-layer oxide thin film transistor based on Li-doped zinc tin oxide. The preparation method comprises the following steps: 1, etching a plurality of active layer deposition regions on a substrate through a photoetching stripping method; 2,...
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| creator | YANG XIAOTIAN WANG CHONG LI DONGXU GUO LIANG CHU XUEFENG YANG FAN LYU SA WANG SUHAO GAO XIAOHONG CHI YAODAN WANG QING WANG CHAO YANG JIA WANG HUAN |
| description | The invention discloses a preparation method of a dual-active-layer oxide thin film transistor based on Li-doped zinc tin oxide. The preparation method comprises the following steps: 1, etching a plurality of active layer deposition regions on a substrate through a photoetching stripping method; 2, depositing a Li-doped zinc tin oxide thin film on the active layer deposition region by using a Li-doped zinc oxide target material and a metallic tin target material through magnetron sputtering to obtain a first active layer; and depositing a zinc tin oxide film on the first active layer by using a zinc oxide target material and a metallic tin target material through magnetron sputtering to obtain a second active layer, wherein when the first active layer is deposited, the partial pressure of O2 is 0; when the second active layer is deposited, the partial pressure of O2 is 5%; 3, removing photoresist from the substrate on which the active layer is deposited, and annealing; 4, etching a plurality of electrode depo |
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| title | Preparation method of dual-active-layer oxide thin film transistor based on Li-doped zinc tin oxide |
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