Optimal rereading gear searching method, system and equipment based on voltage threshold data and storage medium

The invention discloses an optimal reread gear searching method, system and device based on voltage threshold data and a storage medium, and relates to the technical field of data storage, at least one first voltage threshold data is obtained by reading original voltage threshold data of at least on...

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Bibliographische Detailangaben
Hauptverfasser: QIU JIE, GUAN TIANHAN, HE JIAOYANG, LUO WENJIE, YANG RUI
Format: Patent
Sprache:chi ; eng
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Zusammenfassung:The invention discloses an optimal reread gear searching method, system and device based on voltage threshold data and a storage medium, and relates to the technical field of data storage, at least one first voltage threshold data is obtained by reading original voltage threshold data of at least one read voltage of flash memory particles; respectively intercepting the at least one first voltage threshold data to obtain at least one second voltage threshold data; obtaining at least one trough position of the corresponding read voltage based on the at least one second threshold voltage data so as to obtain the offset of the at least one trough position; determining an optimal read offset according to the at least one offset; and combining the optimal read offsets of all the read voltages to obtain an optimal re-read gear. According to the method and the device, the optimal rereading gear of various types of flash memory particles in the current application scene can be accurately found, the universality is goo