Cross linking agent for photoresist, and photoresist combination containing the same
本发明涉及用于光致抗蚀剂的交联剂，该光致抗蚀剂适用于使用KrF(248nm)，ArF(193nm)，电子束，离子束或EUV光源的照相平板印刷法中。按照本发明，优选的交联剂含有一种具有来源于(i)由下列化学分子式1表示的化合物和/或(ii)选自由丙烯酸，甲基丙烯酸和马来酸酐所组成的组中的一种或多种化合物的重复单元的共聚物。 The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 r...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | CHONG CHAE-RYO,SOHN GVN-GYO,KIM MYONG-SOO |
| description | 本发明涉及用于光致抗蚀剂的交联剂，该光致抗蚀剂适用于使用KrF(248nm)，ArF(193nm)，电子束，离子束或EUV光源的照相平板印刷法中。按照本发明，优选的交联剂含有一种具有来源于(i)由下列化学分子式1表示的化合物和/或(ii)选自由丙烯酸，甲基丙烯酸和马来酸酐所组成的组中的一种或多种化合物的重复单元的共聚物。
The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN1162752CC</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN1162752CC</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN1162752CC3</originalsourceid><addsrcrecordid>eNqNizEOwkAMBK-hQMAf_AAoEgQ8wAJRUaWPTHASi8Q-nf1_ARIFJdWORrPL1GAxd5hEn6ID0MAa0FuBPFpYYRePLZA-fgV0Nt9FKcT0zRok-nnHyOA08zotepqcN99dJbicG7zuOFvLnqlj5WjxVlXH-nSoEfd_JC9tjTkK</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Cross linking agent for photoresist, and photoresist combination containing the same</title><source>esp@cenet</source><creator>CHONG CHAE-RYO,SOHN GVN-GYO,KIM MYONG-SOO</creator><creatorcontrib>CHONG CHAE-RYO,SOHN GVN-GYO,KIM MYONG-SOO</creatorcontrib><description>本发明涉及用于光致抗蚀剂的交联剂，该光致抗蚀剂适用于使用KrF(248nm)，ArF(193nm)，电子束，离子束或EUV光源的照相平板印刷法中。按照本发明，优选的交联剂含有一种具有来源于(i)由下列化学分子式1表示的化合物和/或(ii)选自由丙烯酸，甲基丙烯酸和马来酸酐所组成的组中的一种或多种化合物的重复单元的共聚物。
The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.</description><edition>7</edition><language>chi ; eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; ELECTROGRAPHY ; HETEROCYCLIC COMPOUNDS ; HOLOGRAPHY ; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC CHEMISTRY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040818&DB=EPODOC&CC=CN&NR=1162752C$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20040818&DB=EPODOC&CC=CN&NR=1162752C$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHONG CHAE-RYO,SOHN GVN-GYO,KIM MYONG-SOO</creatorcontrib><title>Cross linking agent for photoresist, and photoresist combination containing the same</title><description>本发明涉及用于光致抗蚀剂的交联剂，该光致抗蚀剂适用于使用KrF(248nm)，ArF(193nm)，电子束，离子束或EUV光源的照相平板印刷法中。按照本发明，优选的交联剂含有一种具有来源于(i)由下列化学分子式1表示的化合物和/或(ii)选自由丙烯酸，甲基丙烯酸和马来酸酐所组成的组中的一种或多种化合物的重复单元的共聚物。
The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>ELECTROGRAPHY</subject><subject>HETEROCYCLIC COMPOUNDS</subject><subject>HOLOGRAPHY</subject><subject>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC CHEMISTRY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNizEOwkAMBK-hQMAf_AAoEgQ8wAJRUaWPTHASi8Q-nf1_ARIFJdWORrPL1GAxd5hEn6ID0MAa0FuBPFpYYRePLZA-fgV0Nt9FKcT0zRok-nnHyOA08zotepqcN99dJbicG7zuOFvLnqlj5WjxVlXH-nSoEfd_JC9tjTkK</recordid><startdate>20040818</startdate><enddate>20040818</enddate><creator>CHONG CHAE-RYO,SOHN GVN-GYO,KIM MYONG-SOO</creator><scope>EVB</scope></search><sort><creationdate>20040818</creationdate><title>Cross linking agent for photoresist, and photoresist combination containing the same</title><author>CHONG CHAE-RYO,SOHN GVN-GYO,KIM MYONG-SOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN1162752CC3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2004</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>ELECTROGRAPHY</topic><topic>HETEROCYCLIC COMPOUNDS</topic><topic>HOLOGRAPHY</topic><topic>MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC CHEMISTRY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>CHONG CHAE-RYO,SOHN GVN-GYO,KIM MYONG-SOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CHONG CHAE-RYO,SOHN GVN-GYO,KIM MYONG-SOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Cross linking agent for photoresist, and photoresist combination containing the same</title><date>2004-08-18</date><risdate>2004</risdate><abstract>本发明涉及用于光致抗蚀剂的交联剂，该光致抗蚀剂适用于使用KrF(248nm)，ArF(193nm)，电子束，离子束或EUV光源的照相平板印刷法中。按照本发明，优选的交联剂含有一种具有来源于(i)由下列化学分子式1表示的化合物和/或(ii)选自由丙烯酸，甲基丙烯酸和马来酸酐所组成的组中的一种或多种化合物的重复单元的共聚物。
The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride.wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN1162752CC |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON ELECTROGRAPHY HETEROCYCLIC COMPOUNDS HOLOGRAPHY MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS MATERIALS THEREFOR METALLURGY ORGANIC CHEMISTRY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | Cross linking agent for photoresist, and photoresist combination containing the same |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T10%3A57%3A27IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CHONG%20CHAE-RYO,SOHN%20GVN-GYO,KIM%20MYONG-SOO&rft.date=2004-08-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN1162752CC%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |