Switching element and storage device

The invention relates to a switching element and a storage device. Embodiments provide a memory device including a switching element having excellent characteristics. According to one embodiment, a switching element includes: a first conductive layer; a second conductive layer; and a switching material layer disposed between the first conductive layer and the second conductive layer and formed of an insulating material containing an additive element. The switching material layer comprises a first interface region and a second interface region, the first interface region comprises a first interface between the first conductive layer and the switching material layer, and the second interface region comprises a second interface between the second conductive layer and the switching material layer. A concentration of the additive element in the switching material layer has a first peak in the first interface region. 本公开涉及切换元件和存储装置。实施例提供了一种包括具有优异特性的切换元件的存储装置。根据一个实施例，一种切换元件包括：第一导电层；第二导电层；以及切换材料层，其设置在第一导电层和第二导电层之间并且由