Heterojunction photovoltaic cell, method of manufacturing same, and sputtering target therefor

Disclosed is a heterojunction photovoltaic cell comprising an electrode layer comprising, by weight, more than 0% and equal to or less than 3% of tin oxide, more than 0% and equal to or less than 1% of germanium oxide, and equal to or more than 96% and less than 100% of indium oxide. The electrode layer has an average transmittance of 86% or more and a reflectance of 13.2% or less for light of 300-1200 nm. The sputtering target includes a sintered body containing, by weight, more than 0% and equal to or less than 3% of tin oxide, more than 0% and equal to or less than 1% of germanium oxide, and equal to or more than 96% and less than 100% of indium oxide. The sintered body has an average grain size of 5 [mu] m or more. The sputtering target has one or more phases selected from the group consisting of In2O3, SnO2, In4Sn3O12, (In < 1.91 > Sn < 0.05 >) O < 3 >, and In < 1.91 > Sn < 0.09 > O < 3.05 >. 公开了一种异质结光伏电池，所述异质结光伏电池包括：电极层，包含按重量计大于0％且等于或小于3％的氧化锡、大于0％且等于或小于1％的氧化锗和等于或大于96％且小于100％的氧化铟。电极层针对300-1200nm的光具有86％或更