Long-wave nBn type InAsSb infrared detector material and preparation method thereof

The invention relates to a long-wave nBn type InAsSb infrared detector material and a preparation method thereof, and belongs to the technical field of infrared detectors. The structure of the material sequentially comprises a substrate, a GaSb buffer layer, an Al < 1-x > In < x > Sb component gradient buffer layer, a bottom electrode contact layer, an absorption layer, a barrier layer and a top electrode contact layer from bottom to top. The preparation method is a molecular technology epitaxy method. By designing the structure of an infrared detector material, an nBn-type InAsSb barrier layer structure is formed by adopting an unintentionally doped InAs < 0.56 > Sb < 0.44 > single crystal as an absorption layer, an unintentionally doped In < 0.32 > Al < 0.68 > Sb single crystal with a relatively wide forbidden bandwidth as a barrier layer and an Si-doped n-type InAs < 0.56 > Sb < 0.44 > single crystal as a top and bottom electrode contact layer; through a multi-layer material molecular beam epitaxy process,