Light emitting diode, wafer structure and light emitting device
The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a substrate, a semiconductor lamination layer, a first DBR structure and an anti-sticking layer, the substrate is provided with a front face and a back face which are...
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| creator | XIAO BINGROU ZHUANG YAOWEI CHEN ZHIBIN TANG HONGBIN WU JIAWEN GUO YISHENG WANG JIALE DENG YOUCAI HUANG MIN |
| description | The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a substrate, a semiconductor lamination layer, a first DBR structure and an anti-sticking layer, the substrate is provided with a front face and a back face which are opposite, the semiconductor lamination layer is arranged on the front face of the substrate, the first DBR structure is arranged on the back face of the substrate, and the anti-sticking layer is arranged on the back face of the substrate. The anti-sticking layer is arranged on the side, away from the substrate, of the first DBR structure. The anti-sticking layer is used as the outermost layer of the first DBR structure to be in contact with the UV film, so that the adhesive force between the first DBR structure and the UV film can be greatly reduced, the transfer of the light-emitting diode is facilitated, and the yield of a package factory is further improved.
本发明涉及半导体制造技术领域，特别涉及一种发光二极管，其包括衬底、半导体叠层、第一DBR结构和防黏层，衬底具 |
| format | Patent |
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本发明涉及半导体制造技术领域，特别涉及一种发光二极管，其包括衬底、半导体叠层、第一DBR结构和防黏层，衬底具</description><language>chi ; eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230523&DB=EPODOC&CC=CN&NR=116154078A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230523&DB=EPODOC&CC=CN&NR=116154078A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>XIAO BINGROU</creatorcontrib><creatorcontrib>ZHUANG YAOWEI</creatorcontrib><creatorcontrib>CHEN ZHIBIN</creatorcontrib><creatorcontrib>TANG HONGBIN</creatorcontrib><creatorcontrib>WU JIAWEN</creatorcontrib><creatorcontrib>GUO YISHENG</creatorcontrib><creatorcontrib>WANG JIALE</creatorcontrib><creatorcontrib>DENG YOUCAI</creatorcontrib><creatorcontrib>HUANG MIN</creatorcontrib><title>Light emitting diode, wafer structure and light emitting device</title><description>The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a substrate, a semiconductor lamination layer, a first DBR structure and an anti-sticking layer, the substrate is provided with a front face and a back face which are opposite, the semiconductor lamination layer is arranged on the front face of the substrate, the first DBR structure is arranged on the back face of the substrate, and the anti-sticking layer is arranged on the back face of the substrate. The anti-sticking layer is arranged on the side, away from the substrate, of the first DBR structure. The anti-sticking layer is used as the outermost layer of the first DBR structure to be in contact with the UV film, so that the adhesive force between the first DBR structure and the UV film can be greatly reduced, the transfer of the light-emitting diode is facilitated, and the yield of a package factory is further improved.
本发明涉及半导体制造技术领域，特别涉及一种发光二极管，其包括衬底、半导体叠层、第一DBR结构和防黏层，衬底具</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLD3yUzPKFFIzc0sKcnMS1dIycxPSdVRKE9MSy1SKC4pKk0uKS1KVUjMS1HIQVOZWpaZnMrDwJqWmFOcyguluRkU3VxDnD10Uwvy41OLCxKTU_NSS-Kd_QwNzQxNTQzMLRyNiVEDAIKdMNQ</recordid><startdate>20230523</startdate><enddate>20230523</enddate><creator>XIAO BINGROU</creator><creator>ZHUANG YAOWEI</creator><creator>CHEN ZHIBIN</creator><creator>TANG HONGBIN</creator><creator>WU JIAWEN</creator><creator>GUO YISHENG</creator><creator>WANG JIALE</creator><creator>DENG YOUCAI</creator><creator>HUANG MIN</creator><scope>EVB</scope></search><sort><creationdate>20230523</creationdate><title>Light emitting diode, wafer structure and light emitting device</title><author>XIAO BINGROU ; ZHUANG YAOWEI ; CHEN ZHIBIN ; TANG HONGBIN ; WU JIAWEN ; GUO YISHENG ; WANG JIALE ; DENG YOUCAI ; HUANG MIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116154078A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>XIAO BINGROU</creatorcontrib><creatorcontrib>ZHUANG YAOWEI</creatorcontrib><creatorcontrib>CHEN ZHIBIN</creatorcontrib><creatorcontrib>TANG HONGBIN</creatorcontrib><creatorcontrib>WU JIAWEN</creatorcontrib><creatorcontrib>GUO YISHENG</creatorcontrib><creatorcontrib>WANG JIALE</creatorcontrib><creatorcontrib>DENG YOUCAI</creatorcontrib><creatorcontrib>HUANG MIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>XIAO BINGROU</au><au>ZHUANG YAOWEI</au><au>CHEN ZHIBIN</au><au>TANG HONGBIN</au><au>WU JIAWEN</au><au>GUO YISHENG</au><au>WANG JIALE</au><au>DENG YOUCAI</au><au>HUANG MIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Light emitting diode, wafer structure and light emitting device</title><date>2023-05-23</date><risdate>2023</risdate><abstract>The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a substrate, a semiconductor lamination layer, a first DBR structure and an anti-sticking layer, the substrate is provided with a front face and a back face which are opposite, the semiconductor lamination layer is arranged on the front face of the substrate, the first DBR structure is arranged on the back face of the substrate, and the anti-sticking layer is arranged on the back face of the substrate. The anti-sticking layer is arranged on the side, away from the substrate, of the first DBR structure. The anti-sticking layer is used as the outermost layer of the first DBR structure to be in contact with the UV film, so that the adhesive force between the first DBR structure and the UV film can be greatly reduced, the transfer of the light-emitting diode is facilitated, and the yield of a package factory is further improved.
本发明涉及半导体制造技术领域，特别涉及一种发光二极管，其包括衬底、半导体叠层、第一DBR结构和防黏层，衬底具</abstract><oa>free_for_read</oa></addata></record> |
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| language | chi ; eng |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Light emitting diode, wafer structure and light emitting device |
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