Semiconductor structure and forming method thereof
The invention discloses a semiconductor structure and a forming method thereof, and the structure comprises a substrate which comprises a first region, an isolation region and a second region which are arranged along a first direction, the first region is provided with a plurality of first active re...
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| creator | ZHU HAOZHOU WANG JUN CAI YANFEI YU YANG FANG ZONGYONG WANG DAIPING |
| description | The invention discloses a semiconductor structure and a forming method thereof, and the structure comprises a substrate which comprises a first region, an isolation region and a second region which are arranged along a first direction, the first region is provided with a plurality of first active regions, and the second region is provided with a plurality of second active regions; a first gate structure on the second region; the isolation structure is located on the first region, and the isolation structure and the first gate structure are separated from each other; and the first conductive plug covers the side wall and part of the top surface of the first gate structure, and the first conductive plug is not in contact with the isolation structure. Since the first gate structure and the isolation structure are separated from each other, redundant capacitance formed by connection of the first gate structure and the isolation structure can be avoided, dynamic power consumption can be effectively reduced, and th |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Semiconductor structure and forming method thereof |
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