Threshold voltage distribution adjustment for buffers
A method includes sequentially writing received data to specific locations of a circular buffer of a memory device according to a first set of threshold voltage distributions. The method additionally includes, in response to determining that a trigger event has occurred, performing a trim operation...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | MUCHHERLA KISHORE KUMAR BINFET JEREMY MICOLI CLAUDIO MCNEILL JOHN S. JR GODA AKIRA HELM MARK A MARQUARDT TODD A PUZILLI GIORGIO GOLOV GIL RIGHETTI NICOLA |
| description | A method includes sequentially writing received data to specific locations of a circular buffer of a memory device according to a first set of threshold voltage distributions. The method additionally includes, in response to determining that a trigger event has occurred, performing a trim operation on the particular location by adjusting the first set of threshold voltage distributions of the data to a second set of threshold voltage distributions. The second set of threshold voltage distributions may have a larger read window between adjacent threshold voltage distributions of the second set than the first set of threshold voltage distributions.
一种方法包含根据第一阈值电压分布集将接收到的数据依序写入到存储器装置的循环缓冲器的特定位置。所述方法另外包含响应于确定已发生触发事件，通过将所述数据的所述第一阈值电压分布集调整到第二阈值电压分布集来对所述特定位置执行修整操作。所述第二阈值电压分布集与所述第一阈值电压分布集相比可在所述第二集的相邻阈值电压分布之间具有较大读取窗口。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_CN116134518A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>CN116134518A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_CN116134518A3</originalsourceid><addsrcrecordid>eNrjZDANyShKLc7Iz0lRKMvPKUlMT1VIySwuKcpMKi3JzM9TSEzJKi0uyU3NK1FIyy9SSCpNS0stKuZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGZobGJqaGFo7GxKgBAMDTLeo</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Threshold voltage distribution adjustment for buffers</title><source>esp@cenet</source><creator>MUCHHERLA KISHORE KUMAR ; BINFET JEREMY ; MICOLI CLAUDIO ; MCNEILL JOHN S. JR ; GODA AKIRA ; HELM MARK A ; MARQUARDT TODD A ; PUZILLI GIORGIO ; GOLOV GIL ; RIGHETTI NICOLA</creator><creatorcontrib>MUCHHERLA KISHORE KUMAR ; BINFET JEREMY ; MICOLI CLAUDIO ; MCNEILL JOHN S. JR ; GODA AKIRA ; HELM MARK A ; MARQUARDT TODD A ; PUZILLI GIORGIO ; GOLOV GIL ; RIGHETTI NICOLA</creatorcontrib><description>A method includes sequentially writing received data to specific locations of a circular buffer of a memory device according to a first set of threshold voltage distributions. The method additionally includes, in response to determining that a trigger event has occurred, performing a trim operation on the particular location by adjusting the first set of threshold voltage distributions of the data to a second set of threshold voltage distributions. The second set of threshold voltage distributions may have a larger read window between adjacent threshold voltage distributions of the second set than the first set of threshold voltage distributions.
一种方法包含根据第一阈值电压分布集将接收到的数据依序写入到存储器装置的循环缓冲器的特定位置。所述方法另外包含响应于确定已发生触发事件，通过将所述数据的所述第一阈值电压分布集调整到第二阈值电压分布集来对所述特定位置执行修整操作。所述第二阈值电压分布集与所述第一阈值电压分布集相比可在所述第二集的相邻阈值电压分布之间具有较大读取窗口。</description><language>chi ; eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230516&DB=EPODOC&CC=CN&NR=116134518A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230516&DB=EPODOC&CC=CN&NR=116134518A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MUCHHERLA KISHORE KUMAR</creatorcontrib><creatorcontrib>BINFET JEREMY</creatorcontrib><creatorcontrib>MICOLI CLAUDIO</creatorcontrib><creatorcontrib>MCNEILL JOHN S. JR</creatorcontrib><creatorcontrib>GODA AKIRA</creatorcontrib><creatorcontrib>HELM MARK A</creatorcontrib><creatorcontrib>MARQUARDT TODD A</creatorcontrib><creatorcontrib>PUZILLI GIORGIO</creatorcontrib><creatorcontrib>GOLOV GIL</creatorcontrib><creatorcontrib>RIGHETTI NICOLA</creatorcontrib><title>Threshold voltage distribution adjustment for buffers</title><description>A method includes sequentially writing received data to specific locations of a circular buffer of a memory device according to a first set of threshold voltage distributions. The method additionally includes, in response to determining that a trigger event has occurred, performing a trim operation on the particular location by adjusting the first set of threshold voltage distributions of the data to a second set of threshold voltage distributions. The second set of threshold voltage distributions may have a larger read window between adjacent threshold voltage distributions of the second set than the first set of threshold voltage distributions.
一种方法包含根据第一阈值电压分布集将接收到的数据依序写入到存储器装置的循环缓冲器的特定位置。所述方法另外包含响应于确定已发生触发事件，通过将所述数据的所述第一阈值电压分布集调整到第二阈值电压分布集来对所述特定位置执行修整操作。所述第二阈值电压分布集与所述第一阈值电压分布集相比可在所述第二集的相邻阈值电压分布之间具有较大读取窗口。</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDANyShKLc7Iz0lRKMvPKUlMT1VIySwuKcpMKi3JzM9TSEzJKi0uyU3NK1FIyy9SSCpNS0stKuZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfHOfoaGZobGJqaGFo7GxKgBAMDTLeo</recordid><startdate>20230516</startdate><enddate>20230516</enddate><creator>MUCHHERLA KISHORE KUMAR</creator><creator>BINFET JEREMY</creator><creator>MICOLI CLAUDIO</creator><creator>MCNEILL JOHN S. JR</creator><creator>GODA AKIRA</creator><creator>HELM MARK A</creator><creator>MARQUARDT TODD A</creator><creator>PUZILLI GIORGIO</creator><creator>GOLOV GIL</creator><creator>RIGHETTI NICOLA</creator><scope>EVB</scope></search><sort><creationdate>20230516</creationdate><title>Threshold voltage distribution adjustment for buffers</title><author>MUCHHERLA KISHORE KUMAR ; BINFET JEREMY ; MICOLI CLAUDIO ; MCNEILL JOHN S. JR ; GODA AKIRA ; HELM MARK A ; MARQUARDT TODD A ; PUZILLI GIORGIO ; GOLOV GIL ; RIGHETTI NICOLA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_CN116134518A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng</language><creationdate>2023</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>MUCHHERLA KISHORE KUMAR</creatorcontrib><creatorcontrib>BINFET JEREMY</creatorcontrib><creatorcontrib>MICOLI CLAUDIO</creatorcontrib><creatorcontrib>MCNEILL JOHN S. JR</creatorcontrib><creatorcontrib>GODA AKIRA</creatorcontrib><creatorcontrib>HELM MARK A</creatorcontrib><creatorcontrib>MARQUARDT TODD A</creatorcontrib><creatorcontrib>PUZILLI GIORGIO</creatorcontrib><creatorcontrib>GOLOV GIL</creatorcontrib><creatorcontrib>RIGHETTI NICOLA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MUCHHERLA KISHORE KUMAR</au><au>BINFET JEREMY</au><au>MICOLI CLAUDIO</au><au>MCNEILL JOHN S. JR</au><au>GODA AKIRA</au><au>HELM MARK A</au><au>MARQUARDT TODD A</au><au>PUZILLI GIORGIO</au><au>GOLOV GIL</au><au>RIGHETTI NICOLA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Threshold voltage distribution adjustment for buffers</title><date>2023-05-16</date><risdate>2023</risdate><abstract>A method includes sequentially writing received data to specific locations of a circular buffer of a memory device according to a first set of threshold voltage distributions. The method additionally includes, in response to determining that a trigger event has occurred, performing a trim operation on the particular location by adjusting the first set of threshold voltage distributions of the data to a second set of threshold voltage distributions. The second set of threshold voltage distributions may have a larger read window between adjacent threshold voltage distributions of the second set than the first set of threshold voltage distributions.
一种方法包含根据第一阈值电压分布集将接收到的数据依序写入到存储器装置的循环缓冲器的特定位置。所述方法另外包含响应于确定已发生触发事件，通过将所述数据的所述第一阈值电压分布集调整到第二阈值电压分布集来对所述特定位置执行修整操作。所述第二阈值电压分布集与所述第一阈值电压分布集相比可在所述第二集的相邻阈值电压分布之间具有较大读取窗口。</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng |
| recordid | cdi_epo_espacenet_CN116134518A |
| source | esp@cenet |
| subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Threshold voltage distribution adjustment for buffers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-25T00%3A24%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MUCHHERLA%20KISHORE%20KUMAR&rft.date=2023-05-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ECN116134518A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |